Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Naoufel Ismail"'
Autor:
Naoufel Ismail, Mongi Bouaicha
Publikováno v:
2022 IEEE 9th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee7ded7c06bc297d8c0aba74a0c1790e
https://doi.org/10.1109/setit54465.2022.9875735
https://doi.org/10.1109/setit54465.2022.9875735
Publikováno v:
2019 International Conference on Signal, Control and Communication (SCC).
In this research work, we designed and discussed a structure of high electron mobility transistor based on Gallium Nitride HEMT GaN size. To achieve this, we have designed an original two-dimensional architecture composed of COMSOL Multi-physics soft
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aef9247369ed7a04c99cb79126a0217
https://doi.org/10.1109/scc47175.2019.9116180
https://doi.org/10.1109/scc47175.2019.9116180
Publikováno v:
International Journal of Modelling, Identification and Control. 38:302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e17c3b843aafa49126ec3e3b2569a82
https://doi.org/10.1504/ijmic.2021.123379
https://doi.org/10.1504/ijmic.2021.123379
Publikováno v:
physica status solidi c. 3:499-503
We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad1d6f07152b9466e63262ba1802860
https://doi.org/10.1002/pssc.200564168
https://doi.org/10.1002/pssc.200564168