Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Naoto Yoshii"'
Autor:
Naoto Yoshii, Shinichi Urabe, Mizuho Morita, Kazuo Nishimura, Junichi Uchikoshi, Takaaki Hirokane, Kenta Arima, Satoru Morita, Tatsuya Okazaki
Publikováno v:
Japanese Journal of Applied Physics. 47:8317-8320
The tunneling currents through ultrathin silicon dioxide films from metal to silicon in the oxide thickness regime between 1.4 and 3.5 nm are characterized using different-metal gates. The energy barrier heights and the effective mass of the silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73dfbc30519447d19f845bd72af9b2c0
https://doi.org/10.1143/jjap.47.8317
https://doi.org/10.1143/jjap.47.8317
Publikováno v:
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).
In this study, we have examined a way to determine the barrier height of ultra-thin SiO/sub 2/ films by current density-oxide voltage characteristics of MOS diode using different metal gates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d4b5a2b47bc341f5bfa73d3e6a84ba9
https://doi.org/10.1109/iwgi.2003.159193
https://doi.org/10.1109/iwgi.2003.159193
Autor:
Takaaki Hirokane, Naoto Yoshii, Tatsuya Okazaki, Shinichi Urabe, Kazuo Nishimura, Satoru Morita, Mizuho Morita
Publikováno v:
ECS Meeting Abstracts. :749-749
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2cba58d6f3e38de5fa735f48a2a9bca
https://doi.org/10.1149/ma2005-02/19/749
https://doi.org/10.1149/ma2005-02/19/749