Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Naoto Utsuyama"'
Autor:
Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Naoto Utsuyama, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa
Publikováno v:
Journal of Materials Science and Chemical Engineering. :25-31
Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::878a584616b37c76097c05a09574a595
https://doi.org/10.4236/msce.2018.61004
https://doi.org/10.4236/msce.2018.61004
Autor:
Takane Yamada, Kei Satoh, Keisuke Arimoto, Kiyokazu Nakagawa, Naoto Utsuyama, Kentarou Sawano, Shohei Mitsui, Junji Yamanaka, Kosuke O. Hara
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b773d8cdce5cdc100d54e96f3ce87a92
https://doi.org/10.7567/ssdm.2019.ps-11-07
https://doi.org/10.7567/ssdm.2019.ps-11-07
Autor:
Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Takane Yamada, Kei Sato, Naoto Utsuyama, Junji Yamanaka, Kosuke O Hara, K Sawano, Kiyokazu Nakagawa
Publikováno v:
Semiconductor Science and Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88611f1737e51cb62ff2d9ea53617e91
https://doi.org/10.1088/1361-6641/aae072
https://doi.org/10.1088/1361-6641/aae072
Autor:
Junji Yamanaka, Kosuke O. Hara, Kiyokazu Nakagawa, Atsushi Onogawa, Takane Yamada, Kei Sato, Naoto Utsuyama, Yuichi Sano, Kentarou Sawano, Shingo Saito, Keisuke Arimoto, Daisuke Izumi
Publikováno v:
Semiconductor Science and Technology. 33:124016
Strained Si/relaxed SiGe heterostructure grown on Si(110) substrate is attractive as a platform for high-hole-mobility Si-wafer-based electronic devices. The thickness of the strained Si has impact on device performances since the influence of the st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ea8a862b46cca2c7415f43015339af
https://doi.org/10.1088/1361-6641/aaeb10
https://doi.org/10.1088/1361-6641/aaeb10
Autor:
Keisuke Arimoto, Naoto Utsuyama, Junji Yamanaka, Kiyokazu Nakagawa, Kosuke O. Hara, Shohei Mitsui, Hiroki Nakazawa, Noritaka Usami
Publikováno v:
Semiconductor Science and Technology. 32:114002
A strained Si/relaxed SiGe heterostructure grown on Si(110) substrate is attractive as a platform for high-hole-mobility Si-based electronic devices. To improve the electrical property, a smoother surface is desirable. In this study, we investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::823d2656abace919e811d51e50b26241
https://doi.org/10.1088/1361-6641/aa8a87
https://doi.org/10.1088/1361-6641/aa8a87
Autor:
Keisuke Arimoto, Naoto Utsuyama, Shohei Mitsui, Kei Satoh, Takane Yamada, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
Publikováno v:
Japanese Journal of Applied Physics; Apr2020, Vol. 59 Issue SG, p1-1, 1p