Zobrazeno 1 - 10
of 232
pro vyhledávání: '"Naoteru Shigekawa"'
Publikováno v:
Functional Diamond, Vol 4, Iss 1 (2024)
Integrating diamonds with GaN presents a promising solution for enhancing heat dissipation. However, a critical challenge lies in developing an engineering substrate that facilitates the growth of high-quality GaN epitaxial layers, enabling the produ
Externí odkaz:
https://doaj.org/article/161901d6e7624e63aea2a5f90ded52a8
Autor:
Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang
Publikováno v:
Functional Diamond, Vol 2, Iss 1, Pp 142-150 (2022)
A GaN-on-diamond structure is the most promising candidate for improving the heat dissipation efficiency of GaN-based power devices. Room-temperature bonding of GaN and diamond is an efficient technique for fabricating this structure. However, it is
Externí odkaz:
https://doaj.org/article/c85d0c0f2d264cd2b74e097abd8f1d8e
Autor:
Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Hao Zhou, Hidetoshi Asamura, Hiroki Uratani, Janak Tiwari, Samuel Graham, Yutaka Ohno, Yasuyoshi Nagai, Tianli Feng, Naoteru Shigekawa, David G. Cahill
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
High thermal conductivity electronic materials are critical for next-generation electronics and photonics. Here, the authors report isotropic high thermal conductivity of 3C-SiC wafers exceeding 500 W m−1K−1.
Externí odkaz:
https://doaj.org/article/ae63b74d61824691a8141840b671e3ed
Autor:
Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Hongxing Wang, Naoteru Shigekawa
Publikováno v:
Functional Diamond, Vol 1, Iss 1, Pp 110-116 (2022)
A new technique of diamond and InGaP room temperature bonding in atmospheric air is reported. Diamond substrate cleaned with H2SO4/H2O2 mixture solution is bonded to InGaP exposed after removing the GaAs layer by the H2SO4/H2O2/H2O mixture solution.
Externí odkaz:
https://doaj.org/article/62ad47783bb848f5a4649c4db4d6c1f8
Autor:
Hisaaki Nishimura, Yuxin Lin, Masayuki Hizume, Taichi Taniguchi, Naoteru Shigekawa, Tomomi Takagi, Susumu Sobue, Shoichi Kawai, Eiichi Okuno, DaeGwi Kim
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025223-025223-7 (2019)
Water-soluble Mn2+-doped ZnSe quantum dots (QDs) were synthesized using a hydrothermal method. The characteristics of the precursor solutions greatly affected the photoluminescence (PL) properties of the ZnSe:Mn QDs. In QDs synthesized with alkaline
Externí odkaz:
https://doaj.org/article/998140fa0d95470ba83c59a520aa6822
Publikováno v:
Materia Japan. 61:334-339
Autor:
Zhenwei Wang, Takahiro Kitada, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, Masataka Higashiwaki
Publikováno v:
Journal of Applied Physics. 133
We fabricated p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures by surface-activated bonding (SAB) and investigated their electrical properties. Current density–voltage measurement was performed before and after thermal annealing at 450 °C. The curr
Autor:
Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, Yong-Gu Shim, Naoteru Shigekawa
Publikováno v:
Japanese Journal of Applied Physics. 62:SK1005
We investigate the effects of several-hundred-micron thick luminescence down-shifting (LDS) films composed of sol–gel glass with Zn-based nanoparticles (NPs) dispersed on the characteristics of Si solar cells. Their internal quantum efficiencies (I
Autor:
Naoteru Shigekawa, Hisaaki Nishimura, Shoichi Kawai, Tomomi Takagi, Susumu Sobue, Takaya Maekawa, DaeGwi Kim, Kazushi Enomoto
Publikováno v:
Journal of Materials Chemistry C. 9(2):693-701
The sensitivity of Si solar cells to the UV portion of the solar spectrum is low, and must be increased to further improve their efficiencies. In this study, water-soluble ZnSe/ZnS:Mn/ZnS core/shell/shell quantum dots (QDs) capable of converting UV i
Autor:
Yuji Nakamura, Jianbo Liang, Yasuyoshi Nagai, Hong-Xing Wang, Yasuo Shimizu, Naoteru Shigekawa, Yutaka Ohno
Publikováno v:
Functional Diamond. 1:110-116
A new technique of diamond and InGaP room temperature bonding in atmospheric air is reported. Diamond substrate cleaned with H2SO4/H2O2 mixture solution is bonded to InGaP exposed after removing th...