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pro vyhledávání: '"Naotaka Kubota"'
Publikováno v:
physica status solidi (c). :2376-2379
The thermal stability of copper (Cu)-gate AlGaN/GaN high electron mobility transistors (HEMTs) was investigated by annealing the devices at 300 °C and 500 °C for 1 h, and at 700 °C for 30 min, respectively. The current–voltage performance of the
Publikováno v:
Journal of Photopolymer Science and Technology. 16:467-474
We found that the line edge roughness (LER) of resist pattern could be improved by improving the uniformity of the polymer itself, the main component of the photoresist, at stage of the polymerization. Also, we found that, by using the atomic force m
Publikováno v:
IEEE Electron Device Letters. 24:500-502
Copper (Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) with low gate leakage current were demonstrated. For comparison, nickel/gold (Ni/Au) gate devices were also fabricated with the same process conditions except the gate metals. Comp
Publikováno v:
Japanese Journal of Applied Physics. 43:4159
A capacitance–voltage (C–V) method was developed to extrapolate the Schottky barrier height on n-GaN with exponential carrier concentration profile. The carrier concentration profile of the unintentionally doped GaN was determined by C–V measur