Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Naoomi Yamada"'
Autor:
Fumio Kawamura, Yelim Song, Hidenobu Murata, Hitoshi Tampo, Takehiko Nagai, Takashi Koida, Masataka Imura, Naoomi Yamada
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract We clarified that the bandgap of inorganic materials is strongly correlated with their effective coordination number (ECoN) via first-principles calculations and experimental confirmations. Tin mono-sulphide (Pnma) and germanium mono-sulphid
Externí odkaz:
https://doaj.org/article/3e83567f8dc6490084ebaaaad3292709
Autor:
Kaede Makiuchi, Fumio Kawamura, Junjun Jia, Yelim Song, Shunichiro Yata, Hitoshi Tampo, Hidenobu Murata, Naoomi Yamada
Publikováno v:
Chemistry of Materials. 35:2095-2106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96ebedd7de568d1a9e6e24c2f72d43ef
https://doi.org/10.1021/acs.chemmater.2c03671
https://doi.org/10.1021/acs.chemmater.2c03671
Publikováno v:
Journal of the Ceramic Society of Japan. 130:331-336
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::387b85f7c67bea01d790d002d70694ee
https://doi.org/10.2109/jcersj2.21169
https://doi.org/10.2109/jcersj2.21169
Autor:
Masataka Imura, Kenta Matsuura, Mari Mizutani, Fumio Kawamura, Junjun Jia, Hidenobu Murata, Naoomi Yamada
Publikováno v:
ACS Applied Electronic Materials. 3:4934-4942
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2d8fa4ad10dc4221a94876534697ca0
https://doi.org/10.1021/acsaelm.1c00754
https://doi.org/10.1021/acsaelm.1c00754
Publikováno v:
ACS Applied Electronic Materials. 3:1341-1349
The variety of wurtzite-type semiconductors with band gaps of 1.8–2.5 eV is limited, which hinders filling the “green gap”. This remains an unresolved problem in green light-emitting diodes (LEDs)....
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37980228a90f8209a28eb40881bfc62d
https://doi.org/10.1021/acsaelm.0c01115
https://doi.org/10.1021/acsaelm.0c01115
Publikováno v:
Inorganic Chemistry. 60:1773-1779
A novel ternary nitride semiconductor, CaSnN2, with a layered rock-salt-type structure (R3m) was synthesized via a high-pressure metathesis reaction. The properties and structures of II-Sn-N2 (II = Ca, Mg, Zn) semiconductors were also systematically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf942f6336f73c4bdc853ec62333b08
https://doi.org/10.1021/acs.inorgchem.0c03242
https://doi.org/10.1021/acs.inorgchem.0c03242
Autor:
Ryouta Shimizu, Yoshitaka Takagi, Tohru Suzuki, Naoomi Yamada, Takeo Ohsawa, Tsutomu Nojima, Akichika Kumatani, Taro Hitosugi, Susumu Shiraki
Publikováno v:
ACS Applied Electronic Materials. 2:517-522
We discuss the transparent conducting mechanism of LiTi2O4. In the Bardeen–Cooper–Schrieffer (BCS) framework, achieving a high superconducting transition temperature (Tc) requires high carrier dens...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bcb1daaa0e272a787875b61163f75d6
https://doi.org/10.1021/acsaelm.9b00751
https://doi.org/10.1021/acsaelm.9b00751
Publikováno v:
Journal of Applied Physics. 132:165702
The ultrafast transient behavior of InN under intensive laser irradiation remains unclear. The simultaneous measurements of pump–probe transient transmission and reflectivity are reported in this study. The irradiation-induced change in the dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86802afac21b606995c5b5374b6eb0f4
https://doi.org/10.1063/5.0114290
https://doi.org/10.1063/5.0114290
Publikováno v:
European Journal of Inorganic Chemistry. 2020:446-451
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::887f84d82c0e9839ff0c86d0a9f84954
https://doi.org/10.1002/ejic.201901059
https://doi.org/10.1002/ejic.201901059
Publikováno v:
Applied Materials Today. 15:153-162
Transparent p–n diodes based on heterojunctions of p-type CuI polycrystalline layers and n-type amorphous In-Ga-Zn-O (a-IGZO) layers can be fabricated at room temperature. CuI effectively absorbs UV light owing to the simultaneous occurrence of ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a2d3f136f3dee3ab04f783a2cbd6d0e
https://doi.org/10.1016/j.apmt.2019.01.007
https://doi.org/10.1016/j.apmt.2019.01.007