Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Naomichi Saito"'
Autor:
Shungo Okamoto, Kazuhiro Ohkawa, Yoshihiro Ishitani, Bei Ma, Ken Morita, Naomichi Saito, Kotaro Ito, Daisuke Iida
Publikováno v:
ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems.
Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separa
Autor:
Bei Ma, Kensuke Oki, Kazuhiro Ohkawa, Yoshihiro Ishitani, Naomichi Saito, Shungo Okamoto, Ken Morita
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Since heat generation in electronic devices induces the degradation of performance, the understanding of their thermal properties is required. InGaN and AlInN alloys are possibly the key materials for optical devices in green gap and high power trans
Autor:
Bei Ma, Daisuke Iida, Kotaro Ito, Kazuhiro Ohkawa, Yoshihiro Ishitani, Naomichi Saito, Ken Morita, Shungo Okamoto
Publikováno v:
Applied Physics Letters. 116:142107
Anisotropic heat transport in a Ga0.84In0.16N/GaN-heterostructure on a sapphire substrate is observed from microscopic Raman images obtained by utilizing coaxial irradiation of two laser beams, one for heating (325 nm) in the GaInN layer and the othe
Autor:
Ken-ichi Shinoda, Naomichi Saito
Publikováno v:
Tokyo J. of Math. 24, no. 1 (2001), 277-289
Autor:
Naomichi Saito
Publikováno v:
Tokyo J. of Math. 22, no. 2 (1999), 323-340