Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Naomi Nandakumar"'
Autor:
Naomi Nandakumar, John W. Rodriguez, Pradeep Padhamnath, Nitin Nampalli, Armin G. Aberle, Shubham Duttagupta
Publikováno v:
Progress in Photovoltaics: Research and Applications. 31:360-368
Publikováno v:
IEEE Journal of Photovoltaics. 11:620-626
We present a subnanometer scale study of the interface between crystalline silicon (c-Si) and aluminum oxide (AlOx) deposited by an industrial type, remotely plasma-enhanced chemical vapor deposition (PECVD) system. We investigate the origin of the n
Autor:
Naomi Nandakumar, Shubham Duttagupta, Vinodh Shanmugam, Ankit Khanna, Armin G. Aberle, Jammaal Kitz Buatis, Nitin Nampalli, Pradeep Padhamnath
Publikováno v:
Solar Energy. 202:73-79
In this work we have characterized screen-printed passivating contacts formed by different commercially available fire-through pastes on phosphorus doped (n+) polysilicon (poly-Si) layers at the rear side of monoPoly™ solar cells. Extremely low rec
Autor:
Nafis Iqbal, Mengjie Li, Tamil S. Sakthivel, Kurt Mikeska, Meijun Lu, Naomi Nandakumar, Shubham Duttagupta, Marwan Dhamrin, Kosuke Tsuji, Stuart Bowden, André Augusto, Yuejun Guan, Sudipta Seal, Kristopher O. Davis
Publikováno v:
Solar Energy Materials and Solar Cells. 250:112089
Autor:
Vinodh Shanmugam, Shubham Duttagupta, Jammaal Kitz Buatis, Johnson Wong, Pradeep Padhamnath, Naomi Nandakumar, Ankit Khanna, Luisa Ma Ortega, Balaji Nagarajan
Publikováno v:
Solar Energy Materials and Solar Cells. 192:109-116
We present a detailed analysis of the contact properties with screen printed fire-through (FT) metal pastes on phosphorus doped (n+) polysilicon (poly-Si) layers. Two different pastes are evaluated for their contact resistivity and contact recombinat
Autor:
Ankit Khanna, Holger Knauss, Naomi Nandakumar, John Rodriguez, Ning Chen, Armin G. Aberle, Balaji Nagarajan, Helge Haverkamp, Shubham Duttagupta, Vinodh Shanmugam, Xia Yan
Publikováno v:
Solar Energy Materials and Solar Cells. 191:117-122
In this paper, bifacial n-type silicon wafer solar cells with a front boron-diffused emitter and a rear phosphorus-diffused back surface field are investigated. The cell structure is abbreviated as nFAB (n-type Front and Back Contact). Three differen
Autor:
Armin G. Aberle, Pradeep Padhamnath, Shubham Duttagupta, Rolf Stangl, Jamaal Kitz Buatis, Naomi Nandakumar
Publikováno v:
Solar Energy Materials and Solar Cells. 187:76-81
Successful integration of carrier selective contacts (so-called passivated contacts) in p-type and n-type front-and-back contact (FAB) silicon solar cells could lift cell efficiencies to above 24% in mass production. In this work, we introduce one of
Autor:
Buatis Jammaal Kitz, Naomi Nandakumar, Vinodh Shanmugam, Pradeep Padhamnath, Marvic-John Naval, Shubham Duttagupta, Nagarajan Balaji
Publikováno v:
Energy Procedia. 150:9-14
In this work, analysis of n+ and p+ doped polycrystalline silicon (poly-Si) layers over in-situ grown interfacial silicon oxide (iOx) for use in passivated contact solar cells is presented. Both the poly-Si and the iOx are deposited using an industri
Publikováno v:
Solar Energy Materials and Solar Cells. 230:111217
Screen-printed contacts to doped polysilicon (poly-Si) layers with high-temperature fire-through pastes is one of the key enablers for widespread industrial acceptance of passivating contact solar cells. In recent years, rapid progress has been made
Autor:
Anh Huy Tuan Le, Wenhao Chen, Johannes P. Seif, Rabin Basnet, Shubham Duttagupta, Di Yan, Naomi Nandakumar, Ziv Hameiri
Publikováno v:
Solar Energy Materials and Solar Cells. 225:111020
The temperature coefficient (TC) is a critical figure of merit to accurately evaluate the performance of solar cells at various operating temperatures, and hence, enabling the comparison between different cell technologies. Recently, tunnel oxide pas