Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Naoma Ban"'
Autor:
Gian Lorusso, Danilo De Simone, Hiroyuki Shindo, Tsuyoshi Kondo, Hirohito Koike, Frieda Van Roey, Peter De Bisschop, Yasutaka Toyoda, Christophe Beral, Taeko Kashiwa, Anne-Laure Charley, Yasushi Ebizuka, Yukari Yamada, Naoma Ban, Mohamed Saib
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
As the development of Extreme Ultraviolet Lithography (EUVL) is progressing toward the sub-10nm generation, the process window becomes very tight. In this situation, local Critical Dimension (CD) variability including stochastic defect directly affec
Autor:
Yasushi Ebizuka, Gian Lorusso, Naoma Ban, Mohamed Saib, Anne-Laure Charley, Tsuyoshi Kondo, Kawamoto Yuta, Philippe Leray
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Over the years, the reduction in the size of semiconductor devices has made their performances extremely sensitive to small differences between printed structures and intended design. As a consequence, metrology equipment manufacturers are nowadays p
Publikováno v:
Microelectronic Engineering. 107:91-96
A non-destructive observation technique for sub-surface voids in Cu interconnect is required to enhance the effectiveness of metallization process development. In this work, the feasibility of high beam energy SEM is investigated through a case study
Publikováno v:
Japanese Journal of Applied Physics. 46:6166-6170
A highly accurate method for measuring beam properties in a variable-shaped electron beam (VSB) system has been developed. This method is based on a knife-edge method with a solid-state detector (SSD) and scattering apertures. In VSB system, it is ne