Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Naoko Okabe"'
Autor:
Yuka Sugihara, Yoshihiro Takamura, Yutaka Yamada, Masakazu Morioka, Makoto Gozawa, Kumiko Kato, Takao Hirano, Fumiko Murao, Miho Shimizu, Sentaro Kusuhara, Tomoya Murakami, Yuki Takenaka, Naoko Okabe, Tatsuya Jujo, Hiroto Terasaki, Daisuke Nagasato, Zhenyu Dong, Shigeo Yoshida, Shuntaro Ogura, Kanako Yasuda, Gaku Ishigooka, Osamu Sawada, Fumiaki Higashijima, Masaru Inatani
Publikováno v:
Journal of Diabetes Investigation, Vol 15, Iss 7, Pp 882-891 (2024)
ABSTRACT Aims/Introduction To conduct a multicenter survey of visually impaired patients with diabetes mellitus (DM) and to identify the physical and ocular characteristics that lead to blindness in Japan. Materials and Methods Visually impaired pati
Externí odkaz:
https://doaj.org/article/d422230ec36445d890fba98b9acb5eb8
Autor:
Hiromasa Hirai, Mariko Yamashita, Masanori Matsumoto, Takeyuki Nishiyama, Daishi Wada, Naoko Okabe, Yutaro Mizusawa, Hironobu Jimura, Tetsuo Ueda, Nahoko Ogata
Publikováno v:
PLoS ONE, Vol 17, Iss 9, p e0264809 (2022)
Retinal vein occlusion (RVO) is a major retinal disease caused by venous thrombosis. Although several studies have proposed an association between venous thrombosis and von Willebrand factor (VWF), the association between RVO and VWF remains unclear.
Externí odkaz:
https://doaj.org/article/93910d8811114961916952650388d71f
Autor:
Naoko, Okabe, Manabu, Morimoto, Masaaki, Kondo, Satoshi, Moriya, Kazushi, Numata, Shin, Maeda, Katsuaki, Tanaka
Publikováno v:
Hepato-gastroenterology. 60(123)
Transarterial chemoembolization (TACE) is a widely applied standard treatment option for treatment-naïve patients with multifocal hepatocellular carcinoma (HCC). However, the treatment strategy in patients with multi-nodular recurrences has not been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::567003db462652db31a4683311005bac
https://pubmed.ncbi.nlm.nih.gov/23108088
https://pubmed.ncbi.nlm.nih.gov/23108088
Autor:
Katsuhiko Hieda, F. Masuoka, Kazumasa Sunouchi, Naoko Okabe, Akihiro Nitayama, Hiroshi Takato, Fumio Horiguchi
Publikováno v:
IEEE Transactions on Electron Devices. 38:573-578
A transistor with compact structures for future MOS devices is discussed. This transistor, whose gate electrode surrounds the pillar silicon island, reduces the occupied area for all kinds of circuits. By using this transistor, the occupied area of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae7cb8e9c3945c1e7a13085fd0f05a0
https://doi.org/10.1109/16.75168
https://doi.org/10.1109/16.75168
Autor:
Katsuhiko Hieda, Akihiro Nitayama, Kazumasa Sunouchi, F. Masuoka, Naoko Okabe, Hiroshi Takato, Fumio Horiguchi
Publikováno v:
IEEE Transactions on Electron Devices. 38:579-583
The M-SGT has a three-dimensional structure, which consists of the source, gate, and drain arranged vertically. The gate electrode surrounds the crowded multipillar silicon islands. Because all the sidewalls of the pillars are used effectively as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e44735d6741c451ad57738e703d474
https://doi.org/10.1109/16.75169
https://doi.org/10.1109/16.75169
Autor:
F. Masuoka, Akihiro Nitayama, Takashi Yamada, Kazumasa Sunouchi, Katsuhiko Hieda, Tohru Ozaki, S. Inoue, Hiroshi Takato, Fumio Horiguchi, Naoko Okabe, Kazuhiko Hashimoto
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A novel three-dimensional memory cell called the surrounding gate transistor (SGT) cell has been developed for 64/256-Mb DRAMs (dynamic RAMs). In the SGT cell structure, a transfer gate and a capacitor electrode surround a pillar silicon island. Cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c06dced73763775a4d35431b7f34cff1
https://doi.org/10.1109/iedm.1989.74220
https://doi.org/10.1109/iedm.1989.74220
Autor:
Kazumasa Sunouchi, F. Masuoka, Hiroshi Takato, Akihiro Nitayama, Fumio Horiguchi, Katsuhiko Hieda, Naoko Okabe
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A novel transistor with compact structure has been developed for MOS devices. This transistor, whose gate electrode surrounds the pillar silicon island, reduces the occupied area for all kinds of circuits. For example, the occupied area of a CMOS inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5823f51748363f9a388b3dd44788e6c
https://doi.org/10.1109/iedm.1988.32796
https://doi.org/10.1109/iedm.1988.32796
Autor:
Kazuhiko Hashimoto, Y. Takahashi, Takashi Yamada, Atsushi Yagishita, S. Takedai, Fumio Horiguchi, F. Masuoka, A. Kumagae, Akihiro Nitayama, Tohru Ozaki, Katsuhiko Hieda, Kazumasa Sunouchi, Naoko Okabe, Hiroshi Takato
Publikováno v:
International Technical Digest on Electron Devices.
The key points of sub-half-micron CMOS technologies for 64-Mb DRAM fabrication are described. The main features of the technologies are (1) an asymmetrical stacked trench capacitor (AST) cell, (2) localized channel implantation through the field oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350c76eb8e12af12708db231843b2de7
https://doi.org/10.1109/iedm.1990.237116
https://doi.org/10.1109/iedm.1990.237116
Size Does Not Determine Aggressiveness of Colorectal Cancer: An Inside to Lesions of Less Than 10 mm
Autor:
Takahisa Matsuda, Daizo Saito, Takahiro Fujii, Tsuyoshi Kikuchi, Hisatomo Ikehara, Yutaka Saito, Toshio Uraoka, Takeshi Nakajima, Fabian Emura, Naoko Okabe, Yasushi Sano, Yumi Mashimo, Yoko Tateishi
Publikováno v:
Gastrointestinal Endoscopy. 63:AB210
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a18325341aeccdba7ac87bfbc010b54
https://doi.org/10.1016/j.gie.2006.03.512
https://doi.org/10.1016/j.gie.2006.03.512
Autor:
Naoko Okabe, Akihiro Nitayama, Hiroshi Takato, Katsuhiko Hieda, Kazumasa Sunouchi, F. Masuoka, Fumio Horiguchi
Publikováno v:
IEEE Transactions on Electron Devices. 36:2605-2606
Summary form only given. In order to overcome the scaling limitations on planar transistors for future LSIs, the authors propose a novel surrounding gate transistor (SGT), whose gate electrode surrounds multipillar silicon islands. The new SGT offers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ad10fc87d0a3b609e07a106c582da38
https://doi.org/10.1109/16.43705
https://doi.org/10.1109/16.43705