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pro vyhledávání: '"Naoki eHigashitarumizu"'
Autor:
Abdelrahman Zaher Al-Attili, Satoshi eKako, Muhammad eHusain, Frederic eGardes, Naoki eHigashitarumizu, Satoshi eIwamoto, Yasuhiko eArakawa, Yasuhiko eIshikawa, Hideo eArimoto, Katsuya eOda, Tatemi eIdo, Shinichi eSaito
Publikováno v:
Frontiers in Materials, Vol 2 (2015)
Ge is considered to be one of the most promising materials for realizing full monolithic integration of a light source on a silicon (Si) photonic chip. Tensile-strain is required to convert Ge into an optical gain material and to reduce the pumping r
Externí odkaz:
https://doaj.org/article/1cccfef1413a4314b823c74593ba5c0c
