Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Naoki Yutani"'
Autor:
Keiko Fujihira, Akemi Nagae, Naoki Yutani, Kenichi Ohtsuka, Hiroshi Watanabe, Y. Fujii, T. Nakatani, Yoshiyuki Nakaki, Shuhei Nakata
Publikováno v:
Materials Science Forum. 725:53-56
SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89bb9c0874aaeff398417587b3e4b560
https://doi.org/10.4028/www.scientific.net/msf.725.53
https://doi.org/10.4028/www.scientific.net/msf.725.53
Autor:
Shozo Shikama, Naoki Yutani, Yoshinori Matsuno, Ken Ichi Ohtsuka, Kenichi Kuroda, Hiroaki Sumitani
Publikováno v:
Materials Science Forum. :979-982
The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from 4.0x1015 to 5.7x1015 cm-3 was evaluated. It was found that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ad001d76a768b429e414c055e8c278
https://doi.org/10.4028/www.scientific.net/msf.600-603.979
https://doi.org/10.4028/www.scientific.net/msf.600-603.979
Autor:
Tatsuo Oomori, Tetsuya Takami, Naoki Yutani, Keiko Fujihira, Naruhisa Miura, Ken Ichi Ohtsuka, Tomokatsu Watanabe, Yukiyasu Nakao, Masayuki Imaizumi
Publikováno v:
Materials Science Forum. :827-830
Inversion-type 4H-SiC power MOSFETs using p-body implanted with retrograde profiles have been fabricated. The Al concentration at the p-body surface (Nas) is varied in the range from 5×1015 to 2×1018 cm-3. The MOSFETs show normally-off characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3baf849de862c6f97718501c56938ade
https://doi.org/10.4028/www.scientific.net/msf.556-557.827
https://doi.org/10.4028/www.scientific.net/msf.556-557.827
Autor:
Toshio Kanno, Masahiro Uchikoshi, Norimasa Kumada, Naoki Yutani, Junji Nakanishi, Masafumi Kimata, Hideo Wada, Toshio Matsubara, Mitsuhiro Nagashima
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 117:69-74
Monolithic structures, in which the photodetectors are combined with signal multiplexers without bump bonding technology, are beneficial in order to manufacture high resolution infrared focal plane arrays and reduce their production cost. The GeSi/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c58df5ea999b052f2d84fd0b74552c5
https://doi.org/10.1541/ieejsmas.117.69
https://doi.org/10.1541/ieejsmas.117.69
Autor:
Masayuki Imaizumi, Naoki Yutani, Toshikazu Tanioka, Masayuki Furuhashi, S. Yamakawa, Yuji Ebiike, Eisuke Suekawa, Tatsuo Oomori, Yoichiro Tarui, Naruhisa Miura, Shinji Sakai
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
The threshold voltage of 4H-SiC MOSFET increases drastically by performing wet oxidation after nitridation of gate oxide without significant decrease in the channel effective mobility. The increment of the threshold voltage depends on the wet oxidati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61fc1a19c8375e8fe41d7d8090af4bcf
https://doi.org/10.1109/ispsd.2013.6694397
https://doi.org/10.1109/ispsd.2013.6694397
Publikováno v:
IEEE Transactions on Electron Devices. 38:1131-1135
A multispectral linear array has been developed for remote-sensing applications in the short-wavelength (SW) infrared (IR) band. The device is a monolithic quadruple-band image sensor, consisting of 4096 detectors for each band. The SW-IR sensor uses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f21445dca579ee7884ca5f31765d759
https://doi.org/10.1109/16.78389
https://doi.org/10.1109/16.78389
Autor:
Keiko Fujihira, Naruhisa Miura, Tomokatsu Watanabe, Yukiyasu Nakao, Naoki Yutani, Ken Ichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami, Tatsuo Oomori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31c34cde54a24f3dac3d5702ff3424ae
https://doi.org/10.4028/0-87849-442-1.827
https://doi.org/10.4028/0-87849-442-1.827
Publikováno v:
1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A description of a vertical charge transfer that makes it possible to narrow the channel width to the size of the lithographic limit without degradation of charge handling capacity of the vertical charge transfer will be presented. The array size of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::369fd7c59a59f578688019dec48ebae1
https://doi.org/10.1109/isscc.1985.1156786
https://doi.org/10.1109/isscc.1985.1156786
Publikováno v:
The Sixteenth Annual International Conference on Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE.
This paper presents a newly developed pressure sensor. The principle of its pressure measurement is based on heat transfer from a heat source fabricated on a sensor element to a metal diaphragm, to which pressure is applied. The lower linearity error
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42eae77acd259ddded4d2b0752a4c72a
https://doi.org/10.1109/memsys.2003.1189795
https://doi.org/10.1109/memsys.2003.1189795
Publikováno v:
Proceedings of IEEE Sensors.
This paper presents a newly developed pressure sensor. The principle of its pressure measurement is based on heat transfer from a heat source fabricated on a sensor element to a metal diaphragm, to which pressure is applied. The sensor element is fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19eae3ca6587774c6135ed212326acc7
https://doi.org/10.1109/icsens.2002.1037243
https://doi.org/10.1109/icsens.2002.1037243