Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Naoki Yasui"'
Autor:
Maki Tanaka, Shaunee Cheng, Naoki Yasui, Mayuka Osaki, Toru Ishimoto, Miki Isawa, Kohei Sekiguchi, Chie Shishido, Norio Hasegawa
Publikováno v:
SPIE Proceedings.
The model-based library (MBL) matching technique was applied to measurements of photoresist patterns exposed with a leading-edge ArF immersion lithography tool. This technique estimates the dimensions and shape of a target pattern by comparing a meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7352f14ebe546e0afacdd215fd86ae9
https://doi.org/10.1117/12.846504
https://doi.org/10.1117/12.846504
Publikováno v:
SPIE Proceedings.
With semiconductor technology moving to smaller patterns after the 45nm hp node, introduction of high-NA immersion lithography progresses, and with it, the challenge of decreasing process latitude. The decreasing lithography tool focus margin is ment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6fdb84b0988810f6086f47b5e7138a
https://doi.org/10.1117/12.846541
https://doi.org/10.1117/12.846541
Publikováno v:
ECS Meeting Abstracts. :1377-1377
As dimensions of semiconductor devices shrink further into the nanometer range, transistor performance is improved not only by scaling and adopting boosting technology, but also by adopting new channel material and structure. It is also required to r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6806365d4c4a39f7629a8cb60aa7ef3
https://doi.org/10.1149/ma2015-01/21/1377
https://doi.org/10.1149/ma2015-01/21/1377
Publikováno v:
Japanese Journal of Applied Physics. 43:1149
The effect of Push–Pull bias (phase-controlled bias) on the plasma potential and sputtering at the chamber-wall was investigated. It was found that the plasma potential could be controlled unrelated to the geometrical configuration of the chamber b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dab8eecbbb4db9b61fe092eab7465df3
https://doi.org/10.1143/jjap.43.1149
https://doi.org/10.1143/jjap.43.1149