Výsledky vyhledávání - "Naoki Torazawa"

Akademický článek

Robust Pixel Design Methodologies for a Vertical Avalanche Photodiode (VAPD)-Based CMOS Image Sensor

Publikováno v: Sensors, Vol 24, Iss 16, p 5414 (2024)

We present robust pixel design methodologies for a vertical avalanche photodiode-based CMOS image sensor, taking account of three critical practical factors: (i) “guard-ring-free” pixel isolation layout, (ii) device characteristics “insensitive

Externí odkaz: https://doaj.org/article/b311ab22da3c448c812c555510b8efe6

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Akademický článek

A Nearly Interference-Free and Depth-Resolution-Configurable Time-of-Flight System Based on a Mega-Pixel Vertical Avalanche Photodiodes CMOS Image Sensor

Publikováno v: IEEE Open Journal of Circuits and Systems, Vol 3, Pp 324-335 (2022)

We present a long range (~250 m) time-of flight (TOF) system with suppressed (nearly-free) mutual-interference. The system is based on a $1296\times960$ pixels vertical avalanche photodiodes (VAPD) CMOS image sensor (CIS). Real-time long-range 3D-ima

Externí odkaz: https://doaj.org/article/bf10f66fcdca4628aef7bdd53db89764

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Transmission Electron Microscopy of Interfaces in Joints between Pb-Free Solders and Electroless Ni-P

Autor: Yoshihisa Takase, Shigeo Arai, Katsuhiro Sasaki, Naoki Torazawa, Hiroyasu Saka

Publikováno v: MATERIALS TRANSACTIONS. 44:1438-1447

Microstructures of joints between a Ni-8 mass%P UBM (under bump metallization) and three different Pb-free solders, i.e., Sn-Ag, Sn-Ag-Cu and Sn-Ag-Cu-Bi were studied by transmission electron microscopy. The phases formed near the joint interfaces as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b12a104df422e4d6ac54216111172e2b
https://doi.org/10.2320/matertrans.44.1438

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A 0.9 µm pixel size image sensor realized by introducing organic photoconductive film into the BEOL process

Autor: Shunsuke Isono, Tetsuo Satake, Shuji Hirao, Tetsuya Ueda, Takashi Hyakushima, Kenji Taki, Makoto Tsutsue, R. Sakaida, Kotaro Nomura, S. Kishimura, Naoki Torazawa

Publikováno v: 2013 IEEE International Interconnect Technology Conference - IITC.

A stacked image sensor with a 0.9 μm pixel size fabricated by using organic photoconductive film (OPF) was realized. It is the first trial to introduce an active material, that is, an organic semiconductor into the BEOL process. This pixel structure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::811b44b60431d24c12b9751d20e0e650
https://doi.org/10.1109/iitc.2013.6615587

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High-performance metal hard mask process using novel TiN film for 32-nm node Cu interconnect and beyond

Autor: Tatsuya Kabe, Susumu Matsumoto, Takenobu Kishida, Takushi Shigetoshi, Shunsuke Hazue, Takeshi Harada, Dai Motojima, Toru Hinomura, Daisuke Inagaki, Naoki Torazawa, Junichi Shibata, Yasunori Morinaga

Publikováno v: 2011 IEEE International Interconnect Technology Conference.

One of the most challenging issues in the metal hard mask (MHM) process is controlling the residual stress in TiN mask. This becomes more important as the feature sizes of trenches and vias continue to shrink and the low k-value dielectrics are intro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::59f9a5c892757640fa1972f9b6e33718
https://doi.org/10.1109/iitc.2011.5940342

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