Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Naoki Nagashima"'
Autor:
Naoki Nagashima, Yuji Sano
Publikováno v:
2022 IEEE 11th Global Conference on Consumer Electronics (GCCE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57bf2500ac47879adba73597c313ee84
https://doi.org/10.1109/gcce56475.2022.10014400
https://doi.org/10.1109/gcce56475.2022.10014400
Autor:
Naoki Nagashima, Yuji Sano
Publikováno v:
Proceedings of the International Display Workshops. :482
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f428067fef530f8fa9ae223174bd5076
https://doi.org/10.36463/idw.2022.0482
https://doi.org/10.36463/idw.2022.0482
Autor:
Naoki Nagashima1, Yoshie Nagashima2
Publikováno v:
American Journal of Management. 2018, Vol. 18 Issue 4, p89-103. 15p.
Autor:
Yoshie Nagashima, Naoki Nagashima
Publikováno v:
Advances in Economics and Business. 5:246-255
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72240f305d36f4e998d08dd48638c41e
https://doi.org/10.13189/aeb.2017.050502
https://doi.org/10.13189/aeb.2017.050502
Publikováno v:
Journal of Marketing Development & Competitiveness. 2015, Vol. 9 Issue 1, p115-128. 14p.
Autor:
Seiji Shindo, Naoki Nagashima
Publikováno v:
Japanese Journal of Administrative Science. 26:97-113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::821bc7da9397f3d20445a0f7298e4507
https://doi.org/10.5651/jaas.26.97
https://doi.org/10.5651/jaas.26.97
Publikováno v:
IEEE Transactions on Electron Devices. 58:1468-1475
Progressive breakdown (PBD), which is now considered a key feature in the breakdown of ultrathin gate oxides, was investigated to help develop a reliable time-dependent-dielectric-breakdown qualification. In particular, this paper focused on treating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deaad9ff4b4133f6eca8bf7b61ed22fe
https://doi.org/10.1109/ted.2011.2114349
https://doi.org/10.1109/ted.2011.2114349
Autor:
Munehisa Takei, Atsushi Ogura, Naoki Nagashima, Kohki Nagata, Amari Koichi, Masanori Tsukamoto, Y. Tateshita, Satoru Mayuzumi, Shinya Yamakawa, Daisuke Kosemura, Hitoshi Wakabayashi, Hiroaki Akamatsu, Terukazu Ohno
Publikováno v:
IEEE Transactions on Electron Devices. 57:1295-1300
An experimental study of mobility and velocity enhancement effects is reported for highly strained short-channel p-channel field-effect transistors (pFETs) using a damascene-gate process on Si (100) and (110) substrates. The relationship between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6673b92acc5376e5646681b8fb4e62c
https://doi.org/10.1109/ted.2010.2045703
https://doi.org/10.1109/ted.2010.2045703
Autor:
Satoru Mayuzumi, Y. Tateshita, T. Ohno, Masanori Tsukamoto, Daisuke Kosemura, Hitoshi Wakabayashi, Shinya Yamakawa, Munehisa Takei, Naoki Nagashima, Atsushi Ogura
Publikováno v:
IEEE Transactions on Electron Devices. 56:2778-2784
A damascene-gate process enhances the drivability in the shorter gate length region, as compared to a conventional gate-first process for pFETs with compressive stress SiN liners and embedded source/drain SiGe. The origin of the gate length effect fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd8869190d774759dca478ee951fffb
https://doi.org/10.1109/ted.2009.2031002
https://doi.org/10.1109/ted.2009.2031002
Autor:
Y. Tateshita, T. Hirano, Naoki Nagashima, Hitoshi Wakabayashi, Kaori Tai, Satoru Mayuzumi, Masanori Tsukamoto, Masashi Nakata, S. Yamaguchi, Shinya Yamakawa
Publikováno v:
IEEE Transactions on Electron Devices. 56:620-626
Newly proposed mobility-booster technologies are demonstrated for metal/high-k gate-stack n- and pMOSFETs. The process combination of top-cut SiN dual stress liners and damascene gates remarkably enhances local channel stress particularly for shorter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::563ff515998d9fbee79251e6cdd624aa
https://doi.org/10.1109/ted.2009.2014192
https://doi.org/10.1109/ted.2009.2014192