Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Naoki Murakoso"'
Publikováno v:
AIP Advances, Vol 8, Iss 10, Pp 105028-105028-9 (2018)
Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Ram
Externí odkaz:
https://doaj.org/article/c32a256c710b490cbc09902ab46a4b4a
Publikováno v:
Defect and Diffusion Forum. 386:38-42
Sb-doped β-FeSi2 epitaxial films on Si(111) were grown by molecular beam epitaxy to control an electron density of β-FeSi2. After an optimization of donor activation conditions in the Sb-doped β-FeSi2, the electron density of 6 × 1018 cm-3 at 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ecd12a0dd8a410900652d42216ee429
https://doi.org/10.4028/www.scientific.net/ddf.386.38
https://doi.org/10.4028/www.scientific.net/ddf.386.38
Publikováno v:
Defect and Diffusion Forum. 386:43-47
Infrared (IR) absorption and polarized Raman spectra were measured in BaSi2 epitaxial films to investigate the vibrational modes and the symmetry of Si4 cluster in BaSi2. By an analysis based on Raman and/or IR activity in the spectra, the symmetry o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bac6f666cf4ea491550138c77aed171d
https://doi.org/10.4028/www.scientific.net/ddf.386.43
https://doi.org/10.4028/www.scientific.net/ddf.386.43
Publikováno v:
Proc. Asia-Pacific Conf. on Semiconducting Silicides and Related Materials 2016.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bea94a2dbdcb003a86f4e9c39414be19
https://doi.org/10.7567/jjapcp.5.011106
https://doi.org/10.7567/jjapcp.5.011106
Publikováno v:
AIP Advances, Vol 8, Iss 10, Pp 105028-105028-9 (2018)
Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Ram
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e8a68690cdcaa2cf0a9a0c978e90726
https://doaj.org/article/c32a256c710b490cbc09902ab46a4b4a
https://doaj.org/article/c32a256c710b490cbc09902ab46a4b4a
Autor:
Yoshikazu Terai, Motoki Iinuma, Naoki Murakoso, Hiroaki Tsukamoto, Haruki Yamaguchi, Takashi Suemasu
Publikováno v:
Japanese Journal of Applied Physics. 56:05DD02
The determination of Raman modes in the range between 280 and 500 cm−1 for a BaSi2(100) epitaxial film on a Si(001) substrate has been accomplished by polarized Raman measurements using a crystal rotation method. The six Raman lines from Si cluster
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7551acc2720357ecf35287001cf86bb4
https://doi.org/10.7567/jjap.56.05dd02
https://doi.org/10.7567/jjap.56.05dd02
Publikováno v:
JJAP Conference Proceedings. 5:011106-011106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1358ebd27988b5a16aea4a415aaca8
https://doi.org/10.56646/jjapcp.5.0_011106
https://doi.org/10.56646/jjapcp.5.0_011106
Autor:
Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Naoki Murakoso, Motoki Iinuma, Takashi Suemasu
Publikováno v:
Japanese Journal of Applied Physics; May2017, Vol. 56 Issue 5S1, p1-1, 1p