Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Naoki Komai"'
Publikováno v:
Physica C: Superconductivity. 262:202-206
For the first time the growth of La 2− x Ca x CuO 4 single crystals with 0 ≤ x ≤ 0.1 by the traveling solvent floating zone (TSFZ) method is reported. The grown crystals were homogeneous in composition and free from inclusions. The Ca content i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b16c87743e0f7955b9c4cfe15669ead3
https://doi.org/10.1016/0921-4534(96)00219-5
https://doi.org/10.1016/0921-4534(96)00219-5
Publikováno v:
Molecular Crystals and Liquid Crystals Incorporating Nonlinear Optics. 184:69-73
Phase diagrams of the Nd2O3-CuO and (Nd. Ce)2O3-CuO systems were investigated by differential thermal analysis. It was found that Nd2CuO4 and Nd2-xCexCuO4 melt incongruently at 1270±5 °C and 1315±5 °C respectively, and the solids of Nd2CuO4 and N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f8aa4f8c7623ec9ea689e2d4657038a
https://doi.org/10.1080/00268949008031740
https://doi.org/10.1080/00268949008031740
Autor:
Shingo Kadomura, T. Hayashi, R. Kanamura, S. Arakawa, A. Isobayashi, Naoki Komai, Y. Ohoka, Y. Ohba
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
A method of integrating high performance and low-cost Cu ultra low-k (ULK) SiOC(k=2.0) hybrid interconnects with SiOC(k=2.65) hard mask structure has been developed. The method combines Cu/ULK interconnects with the self-formed MnOx barrier layer tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b04eed85420e49ef601326486585fb1c
https://doi.org/10.1109/iitc.2007.382351
https://doi.org/10.1109/iitc.2007.382351
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
Self-formed MnOx barrier technology has been successfully integrated for 150nm pitch Cu dual-damascene interconnects with PAr/SiOC (k=2.65) hybrid structure. Barrier formation at the interface of Cu and various low-k films with few Si or O was confir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b8196fc9ddcce2a7d82e2ad060ae882
https://doi.org/10.1109/vlsit.2006.1705243
https://doi.org/10.1109/vlsit.2006.1705243
Autor:
Masao Ishihara, Hiizu Ohtorii, Zenya Yasuda, Takeshi Nogami, Shuzo Sato, Yuji Segawa, Kaori Tai, Y. Ohoka, Shingo Takahashi, Hiroshi Horikoshi, Naoki Komai
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
A PVD-Ta/CVD-WN stacked barrier structure has been newly developed. Its PVD-Ta layer and CVD-WN layer work complementarily. Its conformal CVD-WN layer provides an excellent barrier performance and helps the overlying Cu seed suitable for Cu filling.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9812236813cf8c3a506c61eb46dff3e
https://doi.org/10.1109/iitc.2002.1014931
https://doi.org/10.1109/iitc.2002.1014931
Autor:
Takeshi Nogami, Hiizu Ohtorii, Shingo Takahashi, Yuji Segawa, Zenya Yasuda, Masao Ishihara, Hiroshi Horikoshi, Kaori Tai, H. Yamada, Naoki Komai
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
A fragile porous ultra-low-k (k=2.2) silica was successfully integrated at trench level in damascene copper by applying our previously reported [1] electro chemical polishing (ECP) technique for Cu. After removing Cu by ECP, the barrier (WN) was remo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd5f958aad2e4880383320306ab4f46
https://doi.org/10.1109/vlsit.2002.1015376
https://doi.org/10.1109/vlsit.2002.1015376
Autor:
Shingo Takahashi, Masao Ishihara, Hiizu Ohtorii, Yuji Segawa, Kaori Tai, Shuzo Sato, Y. Ohoka, Hiroshi Horikoshi, Zenya Yasuda, A. Yoshio, Naoki Komai, Takeshi Nogami
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
A new principle for the copper removal process, Electro-Chemical-Polishing (ECP), to replace CMP is demonstrated. ECP which leverages electrochemical dissolution of copper has removal rates determined by the imposed current, higher than 8000 A/min, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1607e8cdef3042d9bac693e9bdd2ab2e
https://doi.org/10.1109/iedm.2001.979413
https://doi.org/10.1109/iedm.2001.979413
Publikováno v:
Physica C: Superconductivity. :437-438
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e86b0aa41b0b250c2c3ede35fec8d871
https://doi.org/10.1016/0921-4534(91)92021-3
https://doi.org/10.1016/0921-4534(91)92021-3
Publikováno v:
Physica C: Superconductivity. 190:112-113
Phase equilibrium in the Nd Ce Cu O system which is useful for crystal growth of Nd 2− x Ce x CuO 4 was determined by TGDTA and EPMA. In the (Nd 0.925 Ce 0.075 ) 2 O 3+δ -CuO system, Nd 1.85 Ce 0.15 CuO 4 melts incongruently at 1315°C, and decomp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e94591c848b7c455e73e471743dc565
https://doi.org/10.1016/s0921-4534(05)80217-5
https://doi.org/10.1016/s0921-4534(05)80217-5