Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Naoka Nagamura"'
Maximum a posteriori estimation for high-throughput peak fitting in X-ray photoelectron spectroscopy
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 4, Iss 1 (2024)
We introduce a peak fitting method to estimate the model parameters and the number of peaks without using the conventional trial-and-error approach. The proposed method automatically removes excess peaks using maximum a posteriori estimation. The com
Externí odkaz:
https://doaj.org/article/bbeaf9dcc5664837becad2e2c7492a24
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 3, Iss 1 (2023)
We propose a fitting model that automatically conducts the background subtraction during high-throughput peak fitting. The fitting model consists of the pseudo-Voigt mixture model and the ramp-sum background model, and each model represents the peak
Externí odkaz:
https://doaj.org/article/7882181d2a50495d84c02bb67375fb60
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 2, Iss 1, Pp 162-174 (2022)
Reflection high-energy electron diffraction (RHEED) data are important for the in-situ characterization of surface conditions during physical vapor deposition. Surface superstructures obtained by adsorbing exotic atoms onto a clean silicon surface, w
Externí odkaz:
https://doaj.org/article/8e79551c339b4e439d48ae8814aec6cb
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 1, Iss 1, Pp 45-55 (2021)
We introduced the spectrum-adapted expectation-conditional maximization (ECM) algorithm to improve the efficiency of the peak fitting of spectral data by various fitting models. The spectrum-adapted ECM algorithm can perform the peak fitting by using
Externí odkaz:
https://doaj.org/article/c31f44687b784453bec00cfd97335468
Autor:
Shunsuke Tsuda, Asako Yoshinari, Shingo Takezawa, Kenta Ohishi, Naoka Nagamura, Wenxiong Zhang, Yutaka Iwasaki, Yoshiki Takagiwa
Publikováno v:
Materials Research Express, Vol 10, Iss 5, p 055506 (2023)
Fe–Al–Si-based thermoelectric (FAST) materials are non-toxic and low-cost materials that can be used for autonomous power supplies to drive internet-of-things wireless sensor devices. The conduction type can be controlled by changing the Al/Si ra
Externí odkaz:
https://doaj.org/article/d94f292ea068498c88d3fa932260247f
Publikováno v:
Science and Technology of Advanced Materials, Vol 20, Iss 1, Pp 733-745 (2019)
We introduce a spectrum-adapted expectation-maximization (EM) algorithm for high-throughput analysis of a large number of spectral datasets by considering the weight of the intensity corresponding to the measurement energy steps. Proposed method was
Externí odkaz:
https://doaj.org/article/592f452685f04525b799967d60c29c7d
Autor:
Mitsuhiro Okada, Naoka Nagamura, Tarojiro Matsumura, Yasunobu Ando, Anh Khoa Augustin Lu, Naoya Okada, Wen-Hsin Chang, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, Toshifumi Irisawa, Takatoshi Yamada
Publikováno v:
APL Materials, Vol 9, Iss 12, Pp 121115-121115-10 (2021)
Monolayer transition metal dichalcogenides (TMDs) have been considered as promising materials for various next-generation semiconductor devices. However, carrier doping techniques for TMDs, which are important for device fabrication, have not been co
Externí odkaz:
https://doaj.org/article/fa2b43ad4a9544caa209c083d6b9ba5b
Autor:
Keiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi, Tsutomu Komatani, Seiji Yaegassi, Keiichi Yui, Ken Nakata, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Masaharu Oshima, Maki Suemitsu, Hirokazu Fukidome
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Abstract With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted con
Externí odkaz:
https://doaj.org/article/71a1bc3c36ce4b248bd1a5f7366d5a86
Autor:
Naoka NAGAMURA, Yasunobu ANDO
Publikováno v:
Vacuum & Surface Science; 2024, Vol. 67 Issue 10, p500-505, 6p
Autor:
Wenxiong Zhang, Eiji Hosono, Daisuke Asakura, Shingo Tanaka, Masaki Kobayashi, Naoka Nagamura, Masaharu Oshima, Jun Miyawaki, Hisao Kiuchi, Yoshihisa Harada
Publikováno v:
CrystEngComm. 25:183-188
The Co 3d electronic structure of each facet of a layered LiCoO2 cathode particle was selectively extracted by microscopic resonant photoelectron spectroscopy to elucidate the surface stability of each facet.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2205b12480f04fc77313981f1db3e36
https://doi.org/10.1039/d2ce01185a
https://doi.org/10.1039/d2ce01185a