Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Naofumi Okubo"'
Autor:
Naofumi Okubo
Publikováno v:
The Journal of The Institute of Electrical Engineers of Japan. 118:422-425
Publikováno v:
IEEE Transactions on Communications. 45:429-436
This paper describes the theoretical performance of a frequency-hopping system using Gaussian-filtered FSK (GFSK), which is a promising candidate for 2.4-GHz wireless local area networks (WLAN). We have improved previous methods to calculate the bit-
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:1630-1633
We propose an approach to describe the large-signal behavior of a high electron-mobility transistor (HEMT) by using a multilayered neural network. To conveniently implement this in standard circuit simulators, we extracted the HEMT's bias dependent b
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 41:199-205
The authors propose a method of characterizing active devices such as the FET by describing S-parameters with a set of rational functions of angular frequency. The set of rational functions is uniquely determined by only 27 coefficients, while the co
Publikováno v:
Electronics and Communications in Japan (Part I: Communications). 75:89-103
Recently, research and development of mobile communications satellites has progressed in every country, and the key technologies for improvement have increased the output power and efficiency of solid-state power amplifiers used in high-output transp
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 73:43-55
The waveguide to microstrip line transition has been used widely in the microwave and millimeter wave bands for several radio communication systems. Since transition from solid waveguide to planar microstrip line is involved, the internal field distr
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:622-624
We propose an empirical large-signal model of high electron mobility transistors (HEMTs). The bias-dependent data of small-signal equivalent circuit elements are obtained from S-parameters measured at various bias settings. And C/sub gs/, C/sub gd/,
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
The authors have developed a 60-GHz FM-continuous wave (CW) radar module that generates sidebands by switching a high electron mobility transistor (HEMT) front-end. The module also uses heterodyne detection for FM-AM conversion noise reduction. The m
Publikováno v:
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.
We have developed a 15/60 GHz one-stage MMIC frequency quadrupler using a 0.25-/spl mu/m AlGaAs/GaAs HEMT. The HEMT was characterized by our empirical large-signal model, in which charge conservation and dispersion are taken into consideration. We in
Autor:
Kazuo Shirakawa, Naofumi Okubo
Publikováno v:
27th European Microwave Conference, 1997.
This paper reports on a general approach to build a large-signal, neural network HEMT model using a genetic algorithm. By representing the configuration of a neural network model as the chromosome of a virtual creature, we looked for an optimum netwo