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pro vyhledávání: '"Naofumi Nishikawa (尚史西川)"'
Autor:
Hirofumi Hoshida, Naofumi Nishikawa (尚史西川), Nikolay G. Galkin, Andrey Gerasimenko, Igor M. Chernev, Yoshikazu Terai, Keisuke Ohdaira, Alexander V. Shevlyagin, Anton K. Gutakovskii
Publikováno v:
Solar Energy. 211:383-395
n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4bf7fd4ed8c49b5c30287799c3273e7
https://doi.org/10.1016/j.solener.2020.09.085
https://doi.org/10.1016/j.solener.2020.09.085
