Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Naofumi Nishikawa"'
Autor:
Hirofumi Hoshida, Naofumi Nishikawa (尚史西川), Nikolay G. Galkin, Andrey Gerasimenko, Igor M. Chernev, Yoshikazu Terai, Keisuke Ohdaira, Alexander V. Shevlyagin, Anton K. Gutakovskii
Publikováno v:
Solar Energy. 211:383-395
n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demo
Autor:
Shuya Tategami, Takanori Hanada, Satoshi Takeichi, Tsuyoshi Yoshitake, Atsuhiko Fukuyama, Naofumi Nishikawa
Publikováno v:
Transactions of the Materials Research Society of Japan. 43:49-52
Autor:
Naofumi Nishikawa
Publikováno v:
Semiconductor Science and Technology. 36:085001
Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature of diamond grains embedded in an amorphous carbon and a hydrogenated amorphous carbon matrix which
Autor:
Naofumi Nishikawa
Publikováno v:
Journal of Vacuum Science & Technology B. 38:062803
Ultranonocrystalline diamond/hydrogenated amorphous carbon composite thin films consist of three different components; ultrananocrystalline diamond crystallites, hydrogenated amorphous carbon, and grain boundaries between them. Since grain boundaries
Autor:
Naofumi Nishikawa, Satoshi Takeichi, Shuya Tategami, Kenjiro Takauchi, Naoki Matsuda, Yuki Katamune, Atsuhiko Fukuyama, Tsuyoshi Yoshitake
Publikováno v:
JSAP-OSA Joint Symposia 2017 Abstracts.
Ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite (UNCD/a-C:H) films possess specific characteristics as follows: (a) the appearance of additional energy levels in diamond bandgap [1]; and (b) large absorption coeffi
Autor:
Naofumi Nishikawa
Publikováno v:
Transactions of the Materials Research Society of Japan. 43:359-359