Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Naochika Horio"'
Autor:
Hitoshi Sato, Naochika Horio, Takako Chinone, Hitoshi Tamura, Kazuyoshi Taniguchi, Youji Yamashita, Shinya Omori, Chihiro Funaoka
Publikováno v:
Japanese Journal of Applied Physics. 42:4197-4202
We investigated the dependence of the electroluminescence (EL) characteristics on the layer thickness and the solid-phase composition of AlGaN clad layers in GaInN single-quantum-well light-emitting diodes (LEDs), and how to control the emission wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640c764e6027921a0a4f0ee7ce2c568b
https://doi.org/10.1143/jjap.42.4197
https://doi.org/10.1143/jjap.42.4197
Publikováno v:
physica status solidi (c). :25-28
We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f98d9a1f9bd57d26fa6a7c2e4fe2115
https://doi.org/10.1002/pssc.200390038
https://doi.org/10.1002/pssc.200390038
Publikováno v:
physica status solidi (b). 228:125-128
To clarify the influence of diffused Mg impurities on the carrier recombination in InGaN multiple quantum wells (MQWs), we have performed a systematic study using time-resolved photoluminescence (PL) measurements. It was found that the MQWs with a p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b88a056c15ed4b9a9e3ab54f0e8bee01
https://doi.org/10.1002/1521-3951(200111)228:1<125::aid-pssb125>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:1<125::aid-pssb125>3.0.co
Autor:
Naochika Horio, T. Kosuge, T. Kuroda, Atsushi Tackeuchi, Kazuyoshi Taniguchi, T. Yabushita, Takako Chinone
Publikováno v:
Applied Physics Letters. 85:3116-3118
The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150−225K are 0.47−0.25ps. These are at least one order of m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b84a4317d44a71b1a054e4414b6b67
https://doi.org/10.1063/1.1806284
https://doi.org/10.1063/1.1806284
Autor:
T. Kuroda, Hirotaka Otake, Takako Chinone, Masataka Kajikawa, Ji Hao Liang, Atsushi Tackeuchi, Naochika Horio, Kazuyoshi Taniguchi
Publikováno v:
SPIE Proceedings.
Exciton spin relaxations in bulk GaN were directly observed with sub-picoseconds time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the a cceptor bound exci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05ffd401f6e79e6303950719646dc767
https://doi.org/10.1117/12.640263
https://doi.org/10.1117/12.640263
Autor:
A. Tackeuchi, Takako Chinone, Naochika Horio, T. Kosuge, T. Kuroda, Kazuyoshi Taniguchi, T. Yabushita
Publikováno v:
AIP Conference Proceedings.
The spin relaxation process of A‐band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub‐picosecond’s time resolution. The spin relaxation times at 150–225 K are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bbe1dd4ff2fda6241b66109dcb1b69
https://doi.org/10.1063/1.1994109
https://doi.org/10.1063/1.1994109
Autor:
Takashi Ebisutani, Hiroyuki Sato, Yasuro Kingo, Shinichi Imagi, Teruyuki Kamiya, Naochika Horio, Kazuhisa Kato, Kazuyoshi Taniguchi, Youji Yamashita
Publikováno v:
Japanese Journal of Applied Physics. 37:6301
We developed a split-flow reactor for growing epitaxial films in an atmospheric metalorganic chemical vapor deposition (MOCVD), where the reactant gas stream is separated from the wall by a buffer gas stream. This reduces the use of reactant gases, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc854812e898a136b2b99b0fdb4a2618
https://doi.org/10.1143/jjap.37.6301
https://doi.org/10.1143/jjap.37.6301