Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Nanoka Miyahara"'
Autor:
Yuhei Kuwahara, Shinichiro Kawakami, Kanzo Kato, Soichiro Okada, Yuya Kamei, Tomoya Onitsuka, Takashi Yamauchi, Nanoka Miyahara, Congque Dinh, Lior Huli, Satoru Shimura
Publikováno v:
Advances in Patterning Materials and Processes XL.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f6fe976d5db8dff2a7d3cc0c8999f6
https://doi.org/10.1117/12.2657076
https://doi.org/10.1117/12.2657076
Autor:
Nanoka Miyahara, Kazunori Koga, Kunihiro Kamataki, Seichi Urakawa, Daisuke Yamashita, Masaharu Shiratani, Naho Itagaki
Publikováno v:
MRS Advances. 4:1551-1556
We have recently developed a novel semiconductor, (ZnO)x(InN)1-x (abbreviated to ZION). In this study, we have succeeded in direct epitaxial growth of ZION films on 19–21%-lattice-mismatched c-plane sapphire by radio-frequency (RF) magnetron sputte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c0eb6cec3e34b7e50c195cc4f45bb32
https://doi.org/10.1557/adv.2019.17
https://doi.org/10.1557/adv.2019.17
Autor:
Daisuke Nakamura, Kazunori Koga, Naho Itagaki, Kazuya Iwasaki, Nanoka Miyahara, Daisuke Yamashita, Masaharu Shiratani, Hyunwoong Seo
Publikováno v:
Materials Science Forum. 941:2099-2103
We have fabricated a new semiconducting material, (ZnO)x(InN)1-x(called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6351ce577932d187e018431d883024
https://doi.org/10.4028/www.scientific.net/msf.941.2099
https://doi.org/10.4028/www.scientific.net/msf.941.2099
Autor:
Naho Itagaki, Kazuto Takeuchi, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Nanoka Miyahara, Kouki Imoto
Publikováno v:
Materials Science Forum. 941:2093-2098
We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-xcrystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-xfilms was realized on single-crystalline ZnO template. X-ray diffraction measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc648645792c8ea059256627cbc89fd
https://doi.org/10.4028/www.scientific.net/msf.941.2093
https://doi.org/10.4028/www.scientific.net/msf.941.2093
Autor:
Kazunori Koga, Kazuya Iwasaki, Masaharu Shiratani, Naho Itagaki, Hyunwoong Seo, Koichi Matsushima, Nanoka Miyahara, Daisuke Yamashita
Publikováno v:
MRS Advances. 2:277-282
We have fabricated ZnInON (ZION), which is a pseudo-binary alloy of wurtzite ZnO and wurtzite InN and has a tunable band gap over the entire visible spectrum and a high optical absorption coefficient of 105 cm-1. ZION films grow two dimensionally at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc28e4e119182ee3df8b24014a809705
https://doi.org/10.1557/adv.2016.625
https://doi.org/10.1557/adv.2016.625