Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Nannan, Mao"'
Autor:
Chuqiao Shi, Nannan Mao, Kena Zhang, Tianyi Zhang, Ming-Hui Chiu, Kenna Ashen, Bo Wang, Xiuyu Tang, Galio Guo, Shiming Lei, Longqing Chen, Ye Cao, Xiaofeng Qian, Jing Kong, Yimo Han
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Van der Waals (vdW) ferroelectrics have attracted significant attention for their potential in next-generation nano-electronics. Two-dimensional (2D) group-IV monochalcogenides have emerged as a promising candidate due to their strong room t
Externí odkaz:
https://doaj.org/article/ef232f68e5e64e8b8b6e6f3da31a6001
Autor:
Nannan, Mao *, Wenjun, Wang *, Ran, Zhang *, Yongsheng, Sun *, Rongyan, Zhou *, Hui, Chen *, Sumin, Zang *, Hui, Xie
Publikováno v:
In Poultry Science January 2024 103(1)
Autor:
Ming‐Hui Chiu, Xiang Ji, Tianyi Zhang, Nannan Mao, Yue Luo, Chuqiao Shi, Xudong Zheng, Hongwei Liu, Yimo Han, William L. Wilson, Zhengtang Luo, Vincent Tung, Jing Kong
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record‐high thermoelectric figure of merit (ZT), purely in‐plane ferroelectricity, and excellent nonlinear optical properties. To explore these
Externí odkaz:
https://doaj.org/article/99070b9304e44dffbd52d99c7e6054e3
Autor:
Yue Luo, Nannan Mao, Dapeng Ding, Ming-Hui Chiu, Xiang Ji, Kenji Watanabe, Takashi Taniguchi, Vincent Tung, Hongkun Park, Philip Kim, Jing Kong, William L. Wilson
Publikováno v:
Nature Nanotechnology. 18:350-356
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ad8e1e877346ab7a8b11eaad95e5d8e
https://doi.org/10.1038/s41565-022-01312-z
https://doi.org/10.1038/s41565-022-01312-z
Autor:
Weijun Luo, Akinola D. Oyedele, Nannan Mao, Alexander Puretzky, Kai Xiao, Liangbo Liang, Xi Ling
Publikováno v:
ACS Physical Chemistry Au. 2:482-489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdddd8dece7d3bc95854acbc738db76b
https://doi.org/10.1021/acsphyschemau.2c00007
https://doi.org/10.1021/acsphyschemau.2c00007
Autor:
Nannan Mao, Yue Luo, Ming‐Hui Chiu, Chuqiao Shi, Xiang Ji, Tymofii S. Pieshkov, Yuxuan Lin, Hao‐Lin Tang, Austin J. Akey, Jules A. Gardener, Ji‐Hoon Park, Vincent Tung, Xi Ling, Xiaofeng Qian, William L. Wilson, Yimo Han, William A. Tisdale, Jing Kong
Publikováno v:
Advanced Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188e245fac39b024dabf98812bffa13d
https://doi.org/10.1002/adma.202210894
https://doi.org/10.1002/adma.202210894
Autor:
Pin-Chun Shen, Yuxuan Lin, Cong Su, Christina McGahan, Ang-Yu Lu, Xiang Ji, Xingzhi Wang, Haozhe Wang, Nannan Mao, Yunfan Guo, Ji-Hoon Park, Yan Wang, William Tisdale, Ju Li, Xi Ling, Katherine E. Aidala, Tomás Palacios, Jing Kong
Publikováno v:
Nature Electronics. 5:28-36
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4db7b9d238961245456abd37342e7a6
https://doi.org/10.1038/s41928-021-00685-8
https://doi.org/10.1038/s41928-021-00685-8
Publikováno v:
The Journal of Physical Chemistry Letters. 12:7442-7452
Raman spectroscopy is a fast and nondestructive characterization technique, which has been widely used for the characterization of the composition and structure information of various materials. The symmetry-dependent Raman tensor allows the detectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e03c12e47f742efbd60ca8bbb19abaf8
https://doi.org/10.1021/acs.jpclett.1c01889
https://doi.org/10.1021/acs.jpclett.1c01889
Autor:
Ya-Qing Bie, Tomas Palacios, Riichiro Saito, Jing Kong, William A. Tisdale, Nannan Mao, Xi Ling, Liangbo Liang, Yuxuan Lin
Publikováno v:
Nano Letters. 21:4809-4815
The strength of interlayer coupling critically affects the physical properties of 2D materials such as black phosphorus (BP), where the electronic structure depends sensitively on layer thickness. Rigid-layer vibrations reflect directly the interlaye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7183ca0bc51ac653a9766d32eaaca6e9
https://doi.org/10.1021/acs.nanolett.1c00917
https://doi.org/10.1021/acs.nanolett.1c00917
Autor:
Hao-Ling Tang, Alex Zettl, Ang-Yu Lu, Vincent Tung, Ju Li, Nannan Mao, Jing Kong, Mohammad Mahdi Tavakoli, Cong Su, Jiangtao Wang, Chao-Ching Cheng, Ming-Hui Chiu, Gregory Pitner, Tomas Palacios, Yuxuan Lin, Lain-Jong Li, Zhengyang Cai, Chih-I Wu, Jihoon Park, Pin-Chun Shen, Ang-Sheng Chou, Xiang Ji, Jeffrey Bokor
Publikováno v:
Nature. 593:211-217
Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered1,2. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5342f4d65166a52a2bcde05b1f2e24e3
https://doi.org/10.1038/s41586-021-03472-9
https://doi.org/10.1038/s41586-021-03472-9