Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Nanfei Zhu"'
Autor:
Nanfei Zhu, Ying Li, Zhitang Song, Bo Liu, Songlin Feng, Yipeng Zhan, Zhen Xu, Lei Wang, Dan Gao
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:74-79
Phase change memory (PCM) devices, consisting of nitrogen-doped Ge2Sb2Te5 (NGST) chalcogenide, are fully integrated in the 110-nm complementary metal–oxide–semiconductor technology. By combining high-resolution transmission electron microscopy (H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc190c25ac5bf15117abd76ffaaa737a
https://doi.org/10.1109/tdmr.2016.2520984
https://doi.org/10.1109/tdmr.2016.2520984
The improvement of nitrogen doped Ge 2 Sb 2 Te 5 on the phase change memory resistance distributions
Autor:
Nanfei Zhu, Yanghui Xiang, Bo Liu, Zhitang Song, Dan Gao, Zhonghua Zhang, Zhen Xu, Jiadong Ren, Yipeng Zhan, Yifeng Chen, Songlin Feng, Changzhou Wang, Heng Wang
Publikováno v:
Solid-State Electronics. 116:119-123
In this paper, the performance of Ge2Sb2Te5 (GST) and nitrogen doped Ge2Sb2Te5 (NGST) have been investigated based on standard 40 nm complementary metal–oxide–semiconductor (CMOS) technology. It shows a larger margin (∼2 orders) between SET and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48efac85c4feb3967db54590f71ed78b
https://doi.org/10.1016/j.sse.2015.11.001
https://doi.org/10.1016/j.sse.2015.11.001
Autor:
Yangyang Xia, Yifeng Chen, Dan Gao, Yipeng Zhan, Changzhou Wang, Bo Liu, Heng Wang, Jiadong Ren, Zhen Xu, Nanfei Zhu, Zhitang Song
Publikováno v:
ECS Solid State Letters. 4:P105-P108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0364c11202a77fb1ba89b3f0fd6f5807
https://doi.org/10.1149/2.0121512ssl
https://doi.org/10.1149/2.0121512ssl
Autor:
Song Zhitang, Yangyang Xia, Nanfei Zhu, Ying Li, Dan Gao, Yipeng Zhan, Zhen Xu, Songlin Feng, Heng Wang, Bo Liu, Lei Wang
Publikováno v:
SPIE Proceedings.
The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aea49a72c3c4196484b992f8b04d1b5
https://doi.org/10.1117/12.2245062
https://doi.org/10.1117/12.2245062
Publikováno v:
Materials Letters. 62:2355-2358
YGG:Tb thin films were successfully prepared by Pechni sol–gel process. The structure, surface morphology, evolution of film crystallization and their luminescent properties were investigated. We find the annealing process is very important to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8c563101509396d4e1e246079bb571
https://doi.org/10.1016/j.matlet.2007.12.001
https://doi.org/10.1016/j.matlet.2007.12.001
Publikováno v:
Journal of Solid State Electrochemistry. 12:1503-1509
In this work, 3-methylthiophene (MeT) was electrochemically incorporated with nano- and mesoporous TiO2 films to form poly(3-methylthiophene) (PMeT)/TiO2 nanocomposite electrochromic electrodes. TiO2 films, which were previously coated on the ITO gla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da82065d13b8ddc6f4a54412b431dcb
https://doi.org/10.1007/s10008-008-0506-6
https://doi.org/10.1007/s10008-008-0506-6
Publikováno v:
Nanotechnology. 17:808-814
The formation of nanoporous TiO2 by anodization of titanium films deposited on silicon substrates was investigated. Films with homogeneously distributed pores having an average pore diameter of 25 nm and interpore distance of 40 nm were obtained by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d6288ad2327a73cf60ef922dde8fc64
https://doi.org/10.1088/0957-4484/17/3/033
https://doi.org/10.1088/0957-4484/17/3/033
Publikováno v:
Journal of Luminescence. :704-706
A novel green phosphor Y 3 Ga 5 O 12 :Tb (YGG) was successfully synthesized by Pechini method. The differential scanning calorimetric (TG-DSC) analysis and X-ray powder diffraction were used to determine the crystallization temperature and the pure p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc2928fcff45a20a4b816c0f2bb97a0f
https://doi.org/10.1016/j.jlumin.2006.01.265
https://doi.org/10.1016/j.jlumin.2006.01.265
Autor:
Guanping Wu, Nanfei Zhu, Zuoya Yang, Gaoming Feng, Jia Xu, Aodong He, Zhitang Song, Bo Liu, Juntao Li, Songlin Feng, Jiadong Ren
Publikováno v:
SPIE Proceedings.
In the fabrication of phase change memory devices, HBr/He gas is employed in patterning Ge 2 Sb 2 Te 5 (GST) because it is damage free to GST sidewall. Accurate and reproducible endpoint detection methods are necessary in this etching process. In-sit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b84c1fa219b24a4f49904e6fee2bf352
https://doi.org/10.1117/12.2018658
https://doi.org/10.1117/12.2018658
Publikováno v:
Shock Waves ISBN: 9783540224976
This paper presents the electromagnetic wave propagation characteristics in plasma and the change of the attenuation coefficients of the microwave with some parameters by using #800mm high temperature shock tube. In order to get the attenuation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::244434a4351f956570cd145d4640c371
https://doi.org/10.1007/978-3-540-27009-6_30
https://doi.org/10.1007/978-3-540-27009-6_30
