Zobrazeno 1 - 10 of 17 pro vyhledávání: '"Nandha Kumar Subramani"'
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Akademický článek
Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations
Autor: Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Raphael Sommet, Raymond Quere
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 175-181 (2017)
In this paper, the type, activation energy (Ea) and cross section (σn) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements. Furthermore, we presen
Externí odkaz: https://doaj.org/article/c80584ab11bd4dc78de9588d7b25705a
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3
Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties
Autor: P. Vigneshwara Raja, Nandha Kumar Subramani, Florent Gaillard, Mohamed Bouslama, Raphaël Sommet, Jean-Christophe Nallatamby
Publikováno v: Electronics, Vol 10, Iss 3096, p 3096 (2021)
Electronics
Electronics, MDPI, 2021, 10 (24), pp.3096. ⟨10.3390/electronics10243096⟩
Electronics; Volume 10; Issue 24; Pages: 3096
The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d23457540271fee9779d84a66c78b389
https://www.mdpi.com/2079-9292/10/24/3096
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4
Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations
Autor: Jean-Christophe Nallatamby, Julien Couvidat, Raymond Quéré, Raphaël Sommet, Ahmad Al Hajjar, Nandha Kumar Subramani
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 175-181 (2017)
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2017, 5 (3), pp.175-181. ⟨10.1109/JEDS.2017.2672685⟩
In this paper, the type, activation energy ( $\textit{E}_{a}$ ) and cross section ( ${\sigma }_{n}$ ) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80aa58d063003c63d490c5864c1e7b9a
https://doi.org/10.1109/jeds.2017.2672685
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5
Time Domain Drain Lag Measurement and TCAD-based Device Simulations of AlGaN/GaN HEMT: Investigation of Physical Mechanism
Autor: Mohamed Bouslama, Jean-Christophe Nallatamby, Nandha Kumar Subramani, Raphaël Sommet
Publikováno v: 2019 14th European Microwave Integrated Circuits Conference (EuMIC).
In this work, traps induced drain-lag dispersion mechanism of GaN/AlGaN/GaN HEMT grown on SiC substrate is investigated through time domain drain lag measurement and TCAD-based physical device simulations. The transient variation of the drain current
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d4b6d5f95e765e93acd463c7ee1b261
https://doi.org/10.23919/eumic.2019.8909549
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6
RF performance improvement on 22FDX® platform and beyond
Autor: Yogadissen Andee, Tom Herrmann, Alban Zaka, Zhixing Zhao, Nandha Kumar Subramani, Steffen Lehmann
Publikováno v: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The paper describes manufacturing process and layout optimizations to improve RF performance of 22FDX® N/PFET devices, based on a comprehensive calibration of DC and RF figures of merit. Process and Device simulations of the individual and combined
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::242bd46ea3339354d560a1a4a41af5b8
https://doi.org/10.1109/sispad.2019.8870435
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7
Low Frequency Drain Noise Characterization of Different Technologies of GaN HEMTs:Investigation of Trapping Mechanism
Autor: Ahmad Al Hajjar, Sylvain Laurent, Nandha Kumar Subramani, Mohamed Bouslama, Jean-Christophe Nallatamby, Michel Prigent
Publikováno v: 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC)
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430029⟩
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, Jul 2018, brive, France
In this paper, we attempt to characterize the low-frequency (LF) drain noise characteristics of 0.25- μ m ultra-short gate length GaN HEMT devices fabricated using different transistor technology. LF drain noise characteristics have been measured us
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::161f74b4e22ac456e79b8934a825bbef
https://hal.archives-ouvertes.fr/hal-02457166
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8
Investigation of Fast and Slow Charge Trapping Mechanisms of GaN/A1GaN HEMTs through Pulsed I-V Measurements and the Associated New Trap Model
Autor: C. Charbonniaud, Jean Christophe Nallatamby, Nandha Kumar Subramani, Raymond Quéré, Sylvain Laurent, Vincent Gillet, Julien Couvidat, Michel Prigent, Nathalie Deltimple
Publikováno v: proceedings of IEEE MTT-S IMS2018
2018 IEEE/MTT-S International Microwave Symposium-IMS 2018
2018 IEEE/MTT-S International Microwave Symposium-IMS 2018, Jun 2018, Philadelphia, United States. pp.720-723, ⟨10.1109/MWSYM.2018.8439142⟩
This paper presents a new approach to characterize and model charge trapping effects of GaN-based high electron mobility transistors (HEMTs). Two types of deep-level traps (slow-emitting and fast-emitting traps) have been characterized apart by perfo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d43cd04ce9b9112f6dbdd8ab5ceb2c3
https://hal.archives-ouvertes.fr/hal-02460436
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9
Low Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and analysis of physical location of traps
Autor: Julien Couvidat, Jean-Christophe Nallatamby, Raymond Quéré, Ahmad Al Hajjar, Nandha Kumar Subramani
Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2017, pp.1-1. ⟨10.1109/LED.2017.2771407⟩
In this letter, an investigation of the low-frequency (LF) drain noise characteristics of the GaN/ AlGaN/GaN HEMT grown on a SiC substrate has been performed. LF drain noise measurements are performed over the frequency range of 20 Hz–1 MHz by vary
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c56f0c8a6bf53eea6c1d83f3c0e3a45
https://hal.archives-ouvertes.fr/hal-01661726
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10
Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties
Autor: Julien Couvidat, Ahmad Al Hajjar, Nandha Kumar Subramani, Didier Floriot, Raymond Quéré, Michel Prigent, Jean-Christophe Nallatamby
Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2017, 38 (8), pp.1109-1112. ⟨10.1109/LED.2017.2717539⟩
In this letter, traps-related dispersion phenomenon of GaN/AlGaN/GaN high electron mobility transistor grown on the SiC substrate is investigated through low-frequency noisemeasurements. Low-frequency drain noise measurements are performed over the f
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b7ef431141f4b0cc3f82e723fe7fb02
https://hal.archives-ouvertes.fr/hal-01661735
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