Zobrazeno 1 - 10
of 2 676
pro vyhledávání: '"Nand flash memory"'
Publikováno v:
Eng, Vol 5, Iss 1, Pp 495-512 (2024)
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAN
Externí odkaz:
https://doaj.org/article/03b5ce7c58ee45af97067eb8d485860d
Publikováno v:
IEEE Access, Vol 12, Pp 142265-142274 (2024)
NAND flash-based solid-state drives have revolutionized storage solutions in resource-restrictive electronics owing to their compact size, low power consumption, and high shock resistance. However, they face limitations such as asymmetrical read, wri
Externí odkaz:
https://doaj.org/article/3ca9fe4932e546e68e795173bde795bf
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 7, Iss , Pp 100099- (2024)
Recently, there has been a growing concern regarding the dependability of NAND flash cells, notably as the scale of their features reduces. To address this issue, implementing error correction codes (ECC) proves to be an effective solution. Among the
Externí odkaz:
https://doaj.org/article/92e537e2dfce4c9dacd2b5bb963f434a
Publikováno v:
Applied Sciences, Vol 14, Iss 15, p 6689 (2024)
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improve
Externí odkaz:
https://doaj.org/article/13e62709663e41c18cca4f6f2d2f112a
Autor:
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100073- (2023)
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negat
Externí odkaz:
https://doaj.org/article/ae1c1d950a9a46879de5e03f422cabc2
Publikováno v:
IEEE Access, Vol 11, Pp 113704-113711 (2023)
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a metho
Externí odkaz:
https://doaj.org/article/da25561f7850480ea2c4045e65a0b84d
Autor:
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 524-530 (2023)
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string po
Externí odkaz:
https://doaj.org/article/6397aec38f21473f9cfd0251938db086
Publikováno v:
IEEE Access, Vol 11, Pp 74420-74437 (2023)
Low-density parity-check (LDPC) codes play an important role in the reliability enhancement of commercial NAND flash memory. Unfortunately, due to the requirement of the reading speed of NAND flash memory, the LDPC decoder will not obtain precise sof
Externí odkaz:
https://doaj.org/article/8ab5be5022154d708f9dd59440a4a052
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 4, Iss , Pp 100031- (2023)
The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper. Specifically, we study the program characteristics, data retention capability junction-free
Externí odkaz:
https://doaj.org/article/67edb04e59eb468a8808cb19fe6b7fab
Publikováno v:
Entropy, Vol 26, Iss 1, p 54 (2024)
This paper presents a coding scheme based on bilayer low-density parity-check (LDPC) codes for multi-level cell (MLC) NAND flash memory. The main feature of the proposed scheme is that it exploits the asymmetric properties of an MLC flash channel and
Externí odkaz:
https://doaj.org/article/92682b9940f54e03ae6ae10efcbe0d39