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pro vyhledávání: '"Nancy E. Lumpkin"'
Publikováno v:
Journal of Materials Research. 11:1244-1254
A process for the formation of low-resistance Ni–Ge–Au ohmic contacts to n+ GaAs has been refined using multivariable screening and response surface experiments. Samples from the refined, low-resistance process (which measure 0.05 ± 0.02 Ω · m
Publikováno v:
Journal of Materials Research. 11:1238-1243
Multivariable screening and response surface experiments have been performed to model ohmic contact resistance (Rc) of a Ni–Ge–Au ohmic metal process for n+ GaAs-based high electron mobility transistors (HEMTs). Seven variables were examined via
Conference
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Autor:
Lumpkin, N.E., Lumpkin, G.R.
Publikováno v:
1996 Conference on Optoelectronic & Microelectronic Materials & Devices Proceedings; 1997, p341-344, 4p
Publikováno v:
Journal of Materials Research; 05/01/1996, Vol. 11 Issue 5, p1244-1254, 11p
Publikováno v:
Journal of Materials Research; 05/01/1996, Vol. 11 Issue 5, p1238-1243, 6p