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Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:2938-2944
A steady‐state model based on a silicon material balance has been proposed to predict the oxygen reactive‐ion‐etching resistance of organosilicon polymers. This model assumes that the rate determining step is sputtering of SiO2 film that forms
Publikováno v:
SPIE Proceedings.
A steady-state model has been proposed to predict the oxygen reactive-ion-etching resistance of organosilicon polymers. This model is based on a Silicon material balance and the assumption that a protective Si02 film forms and reaches a steady-state