Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Nanami Nakayama"'
Autor:
Soma Inaba, Weifang Lu, Kazuma Ito, Sae Katsuro, Nanami Nakayama, Ayaka Shima, Yukimi Jinno, Shiori Yamamura, Naoki Sone, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
ACS Applied Materials & Interfaces. 14:50343-50353
Core-shell GaInN/GaN multiquantum shell (MQS) nanowires (NWs) are gaining great attention for high-efficiency micro-light-emitting diodes (micro-LEDs) owing to the minimized etching region on their sidewall, nonpolar or semipolar emission planes, and
Autor:
Sae Katsuro, Weifang Lu, Kazuma Ito, Nanami Nakayama, Shiori Yamamura, Yukimi Jinno, Soma Inaba, Ayaka Shima, Naoki Sone, Dong-Pyo Han, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Nanophotonics. 11:4793-4804
GaInN/GaN multi-quantum-shell (MQS) nanowires (NWs) are gaining increasing attention as promising materials for developing highly efficient long-wavelength micro-light emitting diodes (LEDs). To improve the emission properties in GaInN/GaN MQS NWs, i
Autor:
Sae Katsuro, Weifang Lu, Nanami Nakayama, Soma Inaba, Yukimi Jinno, Shiori Yamamura, Ayaka Shima, Shiori Ii, Mizuki Takahashi, Yuki Yamanaka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Isamu Akasaki, Motoaki Iwaya, Koji Okuno, Naoki Sone, Kazuma Ito, Tetsuya Takeuchi, Weifang Lu, Satoshi Kamiyama, Yoshiya Miyamoto, Sae Katsuro, Nanami Nakayama
Publikováno v:
ACS Applied Materials & Interfaces. 13:54486-54496
The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) were investigated using metal-organic chemical vapor deposition. By varying the trimethylgallium (TMG) flow rate, Mg doping, and
Autor:
Weifang Lu, Nanami Nakayama, Koji Okuno, Isamu Akasaki, Sae Katsuro, Satoshi Kamiyama, Naoki Sone, Motoaki Iwaya, Tetsuya Takeuchi, Kazuma Ito
Publikováno v:
Nanophotonics, Vol 10, Iss 13, Pp 3441-3450 (2021)
Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditi
Autor:
Sae Katsuro, Weifang Lu, Naoki Sone, Kazuma Ito, Nanami Nakayama, Renji Okuda, Yoshiya Miyamoto, Yukimi Jinno, Shiori Yamamura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Yukimi Jinno, Renji Okuda, Naoki Sone, Weifang Lu, Yoshiya Miyamoto, Kazuma Ito, Shiori Yamamura, Sae Katsuro, Nanami Nakayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Shiori Yamamura, Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Tetsuya Takeuchi, Satoshi Kamiyama, Sae Katsuro, Isamu Akasaki, Motoaki Iwaya, Kazuma Ito, Weifang Lu, Koichi Mizutani, Renji Okuda, Naoki Sone, Nanami Nakayama
Publikováno v:
Nanoscale advances. 4(1)
Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for LED processes were selectively grown on patterned commercial GaN/sapphire sub
Publikováno v:
The Proceedings of the Annual Convention of the Japanese Psychological Association. 81:1D-072