Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Nan-hui Niu"'
Publikováno v:
Journal of Crystal Growth. 304:7-10
The electrical and structural properties of Mg δ-doped GaN epilayers grown by MOCVD were investigated. Compared to uniform Mg-doping GaN layers, it has been shown that the delta-doping (δ-doping) process could suppress the dislocation density and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b44c158f4a212f3432f05421248132b
https://doi.org/10.1016/j.jcrysgro.2007.01.040
https://doi.org/10.1016/j.jcrysgro.2007.01.040
Autor:
Jun Deng, Nan-hui Niu, Huai-bing Wang, Jianping Liu, Yan-hui Xing, Jun Han, Guangdi Shen, Nai-xin Liu
Publikováno v:
Optoelectronics Letters. 3:1-3
InGaN/GaN MQWs structures were grown by MOCVD. The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated. The experimental results show that the growth interruption can improve the interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce487c1e16c591cac1e91b4f61404c2d
https://doi.org/10.1007/s11801-007-6116-1
https://doi.org/10.1007/s11801-007-6116-1