Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Nan-Ying Yang"'
Autor:
Nan-Ying Yang, 楊南盈
93
Liquid phase oxidation (LPO) method to grow native oxide films on InGaP/GaAs HBTs near room temperature is investigated and characterized. This is a very simple, low-cost and low-temperature (30-70oC) technique to grow uniform and smooth nati
Liquid phase oxidation (LPO) method to grow native oxide films on InGaP/GaAs HBTs near room temperature is investigated and characterized. This is a very simple, low-cost and low-temperature (30-70oC) technique to grow uniform and smooth nati
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/03666267145935674230
Autor:
C.Y. Chan, J. L. Yu, Chang Yu-Chi, H. C. Tuan, C. B. Wu, Yu-Syuan Lin, Ru-Yi Su, King-Yuen Wong, Tsai Chun-Lin, Ming-Cheng Lin, Nan-Ying Yang, C.L. Yeh, Fu-Wei Yao, Man-Ho Kwan, Chen Po-Chih, M. W. Tsai, F. J. Yang, Alex Kalnitsky, Haw-Yun Wu, J. L. Tsai
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
GaN Cascode performance optimization for high efficient power applications is presented in this paper. Analytical equations of Cascode capacitance network (Ciss, Coss, Cgd) is demonstrated and the equations accuracy is verified through experimental m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f7357e7649af1273a626ae259d5eb10
https://doi.org/10.1109/ispsd.2016.7520826
https://doi.org/10.1109/ispsd.2016.7520826
Autor:
Hau-yan Lu, Ming-Cheng Lin, Yu-Chang Jong, J. L. Tsai, H. C. Tuan, Alex Kalnitsky, Chen-Yi Lee, Haw-Yun Wu, Nan-Ying Yang, C. B. Wu, L. Chu
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
The behavior of the fully-isolated laterally diffused MOSFETs (LDMOS) during reverse recovery of parasitic diodes such as buck converter or white light emitting diode (WLED) driver application was presented. The fully-isolated MOSFETs with parasitic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e9a9580e34643ab26b8016d6f89659
https://doi.org/10.1109/ispsd.2015.7123410
https://doi.org/10.1109/ispsd.2015.7123410
Publikováno v:
Semiconductor Science and Technology. 21:1160-1166
Native oxide films grown near room temperature by liquid phase oxidation (LPO) on p+-GaAs, n-InGaAs and n-InGaP are investigated. Their applications to heterojunction bipolar transistors (HBTs) are also demonstrated and characterized. With the LPO as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9d52861a1d47b2808b0e4a0b33cb9b
https://doi.org/10.1088/0268-1242/21/8/030
https://doi.org/10.1088/0268-1242/21/8/030
Publikováno v:
IEEE Electron Device Letters. 26:864-866
An InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP oxide layer as the gate dielectric is demonstrated. The MOS-PHEMT not only has the advantages of the MOS structure but also has th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3118b5e08f6af8b6fe5e95b5e7c1e02f
https://doi.org/10.1109/led.2005.859629
https://doi.org/10.1109/led.2005.859629
Publikováno v:
International Conference on Indium Phosphide and Related Materials, 2005..
A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e9bc4eee08f6516a51f5f8b860ecfbf
https://doi.org/10.1109/iciprm.2005.1517546
https://doi.org/10.1109/iciprm.2005.1517546
Autor:
Po-Wen Sze, Yu Ju Lin, Kuan-Wei Lee, Yu-Chang Lee, Nan-Ying Yang, Mau-Phon Houng, Yeong-Her Wang
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, it can be observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21bc78bc632b8ce335b3347e4d2f4a93
https://doi.org/10.1109/icsict.2004.1435305
https://doi.org/10.1109/icsict.2004.1435305
Publikováno v:
Applied Physics Letters. 87:263501
The In0.52Al0.48As∕In0.53Ga0.47As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10–15nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc5fcf2ec333d36d417863fb105c7db
https://doi.org/10.1063/1.2151252
https://doi.org/10.1063/1.2151252
Publikováno v:
Applied Physics Letters; 12/26/2005, Vol. 87 Issue 26, p263501, 3p, 1 Diagram, 3 Graphs
Publikováno v:
IEEE Electron Device Letters; Dec2005, Vol. 26 Issue 12, p864-866, 3p, 3 Graphs