Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Nan-Tzu Lian"'
Autor:
Yao-An Chung, Yuan-Chieh Chu, Chih-Chin Chang, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca37e47eabe62f839de6aa7f43a673ce
https://doi.org/10.1109/asmc57536.2023.10121114
https://doi.org/10.1109/asmc57536.2023.10121114
Autor:
Chih-Chin Chang, Ching-Hung Hsiao, Yi-Che Chen, Ching-Hung Wang, Yao-An Chung, Li-Wei Wang, Hong-Ji Lee, Nan-Tzu Lian, Shih-Chin Lee, Tzung-Ting Han, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d66f58ff09ce26b4fc956c9caf03f0cb
https://doi.org/10.1109/asmc57536.2023.10121140
https://doi.org/10.1109/asmc57536.2023.10121140
Autor:
Yu-Fan Chang, Hong-Ji Lee, Fu-Hsing Chou, Shih-Chin Lee, Yao-An Chung, Nan-Tzu Lian, Tzung-Ting Han, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0504bb9117baa96baf341f03031ad3ca
https://doi.org/10.1109/asmc54647.2022.9792507
https://doi.org/10.1109/asmc54647.2022.9792507
Autor:
Yao-An Chung, Yuan-Chieh Chiu, Yu-Fan Chang, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31619ea983c12e7e24ad07d7c41a4d42
https://doi.org/10.1109/asmc54647.2022.9792529
https://doi.org/10.1109/asmc54647.2022.9792529
Autor:
Pei-Ling Hsu, Yu-Chih Chen, Chin-Chih Yeh, Chun-Hung Lin, Nan-Tzu Lian, I-An Chen, Bing-Chang Li, Tsung-Yi Lin, Kuang-Chao Chen, Ta-Hone Yang, Hsin-Cheng Hsu
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper evaluates the use of plasma etching for preparing TEM specimens to analyze high aspect ratio 3D NAND integrated circuits. By controlling plasma etching parameters, a relatively high material removal rate could be obtained. Moreover, throug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976a5c0dcba994ba7ba8c06cbcc28930
https://doi.org/10.31399/asm.cp.istfa2021p0141
https://doi.org/10.31399/asm.cp.istfa2021p0141
Autor:
Shao-Lou Jheng, Jyunhong Wu, Zusing Yang, Yuan-Chieh Chiu, Ming-Tsung Wu, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4a68a4265d6744c35cf0eb9259514b2
https://doi.org/10.1109/asmc51741.2021.9774980
https://doi.org/10.1109/asmc51741.2021.9774980
Autor:
Pei-Ning Hsu, Chung-Huan Chang, Kuang-Chao Chen, Chih-Yuan Lu, Nan-Tzu Lian, Ta-Hone Yang, Yu-Min Chung
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this work, two analysis methods for word line (WL) defect localization in NAND flash memory array are presented. One is to use the Emission Microscope (EMMI) and Optical Beam Induced Resistance Change (OBIRCH) to analyze the device through backsid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9635fd92d4624e5c310f40992c0e3180
https://doi.org/10.31399/asm.cp.istfa2020p0042
https://doi.org/10.31399/asm.cp.istfa2020p0042
Autor:
Nan-Tzu Lian, Tahone Yang, Yao-Yuan Chang, Zusing Yang, Hong-Ji Lee, Chih-Yuan Lu, Kuang-Chao Chen, Ming-Tsung Wu
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The challenges of oval-shaped silicon dioxide and polysilicon (OP)-layer hole etching, including shape deformation, local arcing, and adjacent hole bridging are reported. We explore the shape deformation evolution step by step and point out that wigg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b717c28767084bf33c0b592ed95a965d
https://doi.org/10.1109/asmc49169.2020.9185191
https://doi.org/10.1109/asmc49169.2020.9185191
Autor:
Zusing Yang, Kuang-Chao Chen, Yao-Yuan Chang, Hong-Ji Lee, Ming-Tsung Wu, Chih-Yuan Lu, Nan-Tzu Lian, Tahone Yang
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
For silicon selective epitaxy growth (Si-SEG) process, an ex situ pre-epitaxial treatment (PET) is applied in order to remove the damaged layer and impurities. In this work, we observe asymmetric Si recess formed at the bottom of vertical channel (VC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c07b61e6efbbfba5b376d1cc97ffee17
https://doi.org/10.1109/asmc49169.2020.9185381
https://doi.org/10.1109/asmc49169.2020.9185381
Autor:
Nan-Tzu Lian, Chun-Hung Lin, Kuang-Chao Chen, Iris Hsieh, Chao-Kun Chen, Pei-Lin Hsu, I-An Chen, Hsin-Cheng Hsu, Chin-Chih Yeh, Ru-Hui Lin, Ta-Hone Yang, Tsung-Yi Lin
Publikováno v:
International Symposium for Testing and Failure Analysis.
Protection layers on double ex situ lift-out TEM specimens were investigate in this paper and two protection layer approaches for double INLO or double EXLO were introduced. The improved protection methods greatly decreased the damage layer on the to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd8e57b7e8b4357c7626446b9ea9c02
https://doi.org/10.31399/asm.cp.istfa2019p0215
https://doi.org/10.31399/asm.cp.istfa2019p0215