Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Nan Jay Wu"'
Autor:
Wei-Hua Hsiao, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jyun-Yong Li, Hong-Jyun Lin, Nan-Jay Wu, Day-Shan Liu
Publikováno v:
Applied Sciences, Vol 6, Iss 2, p 60 (2016)
Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of t
Externí odkaz:
https://doaj.org/article/4ef2c355e465489a86ce6bd9bb0134eb
Autor:
Ching-Ting Lee, Jyun Yong Li, Day Shan Liu, Hong Jyun Lin, Wei Hua Hsiao, Tai Hong Chen, Nan Jay Wu, Li-Wen Lai
Publikováno v:
Applied Sciences, Vol 6, Iss 2, p 60 (2016)
Applied Sciences; Volume 6; Issue 2; Pages: 60
Applied Sciences; Volume 6; Issue 2; Pages: 60
Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b02027741b8cf034a2f65a846c7329f7
http://www.mdpi.com/2076-3417/6/2/60
http://www.mdpi.com/2076-3417/6/2/60
Autor:
Nan-Jay Wu, 吳南傑
100
In this study, the transmission line model produced in the GaN epitaxial layer at room temperature was usingt the RF magnetron sputtering system, the zinc oxide and the indium tin oxide were slected for the sputtering targets to deposite the
In this study, the transmission line model produced in the GaN epitaxial layer at room temperature was usingt the RF magnetron sputtering system, the zinc oxide and the indium tin oxide were slected for the sputtering targets to deposite the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/8v57t9
