Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Namhyun Lee"'
Autor:
Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
Publikováno v:
IEEE Access, Vol 12, Pp 23881-23886 (2024)
Accurate current-voltage (I-V) modeling based on the Berkeley short-channel insulated-gate field-effect transistor model (BSIM) is pivotal for integrated circuit simulation. However, the current BSIM model does not support a buried-channel-array tran
Externí odkaz:
https://doaj.org/article/be40799b6d1e4e5da92ee9cb9d41dd5d
Autor:
Hyunseo You, Kihoon Nam, Jehyun An, Chanyang Park, Donghyun Kim, Seonhaeng Lee, Namhyun Lee, Rock-Hyun Baek
Publikováno v:
IEEE Access, Vol 12, Pp 10988-10994 (2024)
This study investigated a novel forward body bias (FBB) analysis to optimize the threshold voltage ( $\text{V}_{\mathrm {th}}$ ) at cryogenic temperatures in the latest dynamic random-access memory (DRAM). Electrical measurements were conducted to an
Externí odkaz:
https://doaj.org/article/0d98260d7f88492fb8965b2bee05a9ea
Autor:
Sungju Choi, Ga Won Yang, Sangwon Lee, Jingyu Park, Changwook Kim, Jun Park, Hyun-Seok Choi, Namhyun Lee, Gang-Jun Kim, Yoon Kim, Myounggon Kang, Changhyun Kim, Jong-Ho Bae, Dae Hwan Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:48-52
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99adbcb9dcd06e124103f327f16f902f
https://doi.org/10.1109/ted.2022.3221028
https://doi.org/10.1109/ted.2022.3221028
Autor:
Hyunseo You, Jehyun An, Kihoon Nam, Bohyeon Kang, Jongseo Park, Namhyun Lee, Seonhaeng Lee, Rock-Hyun Baek
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3000f7ca23a61b42b6c85f23f40adb
https://doi.org/10.1109/edtm55494.2023.10102979
https://doi.org/10.1109/edtm55494.2023.10102979
Publikováno v:
Japanese Journal of Applied Physics; Jun2016, Vol. 55 Issue 6, p1-1, 1p