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Autor:
NamHee Yoo, Sangwoong Yoon, Young-sun Kim, Hoe-sik Chung, Je-Eung Park, Jin-hang Jung, KwangSoek Choi
Publikováno v:
Advances in Resist Technology and Processing XVII.
To reach the sub-0.3 micrometer contact hole pattern by i-line lithography, some advanced technology was introduced such as Phase Shift Mask (PSM) and/or photoresist (PR) flow process. It may be possible that the contact hole is patterned with 0.18 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eecccd0053c6ef0060bb525c8ead1284
https://doi.org/10.1117/12.388334
https://doi.org/10.1117/12.388334
