Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Nam-Yeal Lee"'
Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects
Autor:
Sung-Yup Jung, Noh Jung Kwak, Baek-Mann Kim, Byoung-Joon Kim, Young-Chang Joo, Seung Jin Yeom, Nam Yeal Lee
Publikováno v:
Microelectronic Engineering. 89:58-61
Cu-ion-migration-induced dielectric breakdown in damascene Cu interconnect was studied in alternating polarity-bias conditions using a metal-insulator-semiconductor (MIS) structured sample and a damascene Cu interconnect sample. Compared to a direct-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e187a02d6b1152d3baa43202f6be38ca
https://doi.org/10.1016/j.mee.2011.01.070
https://doi.org/10.1016/j.mee.2011.01.070
Autor:
Tae-Jin Park, Byoung-Gon Yu, Young Sam Park, Kyu-Jeong Choi, Sung-Min Yoon, Seung-Yun Lee, Nam-Yeal Lee, Se-Young Choi
Publikováno v:
Integrated Ferroelectrics. 93:83-89
For the realization of reliable nonvolatile phase-change memory operations, it is very important to understand the long-term behaviors of memory states with different resistance values. We investigated the time-dependent behaviors of RESET resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789d3a3f53d5200b345aa6d0b5bb018d
https://doi.org/10.1080/10584580701756151
https://doi.org/10.1080/10584580701756151
Publikováno v:
Japanese Journal of Applied Physics. 46:7225-7231
We modified the composition of Ge–Sb–Te alloys for phase-change-type nonvolatile memory devices to realize more reliable memory operations. It is expected that the stability of the low-resistance crystalline phase of the Ge–Sb–Te alloy can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2204e43c00b231587a1606b71f354d70
https://doi.org/10.1143/jjap.46.7225
https://doi.org/10.1143/jjap.46.7225
Publikováno v:
Applied Surface Science. 254:316-320
In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge2Sb2Te5 (GST) was used as the active phase-ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04cb2e54c98f6b21faf5ca41b74339d6
https://doi.org/10.1016/j.apsusc.2007.07.098
https://doi.org/10.1016/j.apsusc.2007.07.098
Autor:
Byoung-Gon Yu, Kyu-Jeong Choi, Young Sam Park, Seung-Yun Lee, Nam-Yeal Lee, Sang-Ouk Ryu, Sung-Min Yoon, Sang-Heung Lee, Sanghoon Kim
Publikováno v:
Applied Surface Science. 254:312-315
The effect of the electrical resistivity of a silicon–germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6904af14d0a4dd942d59f2a0b535fc87
https://doi.org/10.1016/j.apsusc.2007.07.097
https://doi.org/10.1016/j.apsusc.2007.07.097
Publikováno v:
Japanese Journal of Applied Physics. 46:L99-L102
For the realization of highly reliable phase-change memory devices, it is very important to understand their operational failure modes. We presented the failure behavior of devices using Ge2Sb2Te5 (GST) as a phase-change material, in which the drift
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20087ad2b35ad6a4123ae405f0730052
https://doi.org/10.1143/jjap.46.l99
https://doi.org/10.1143/jjap.46.l99
Autor:
Kyu Jeong Choi, Dae-Hyun Kim, Byoung Gon Yu, Se-Young Choi, Nam Yeal Lee, Sung Min Yoon, Tae Jin Park
Publikováno v:
Japanese Journal of Applied Physics. 45:L1273-L1276
Sn was employed in Ge2Sb2Te5 to accelerate operation speed of phase change random access memory (PRAM). Crystallized Sn-doped Ge2Sb2Te5 showed face centered cubic (fcc) or hexagonal close packed (hcp) structures upon heat treatment, which was similar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b522177b159f34374a0c7b3dd9a839cb
https://doi.org/10.1143/jjap.45.l1273
https://doi.org/10.1143/jjap.45.l1273
Publikováno v:
Japanese Journal of Applied Physics. 45:L1080-L1083
We investigated dry etching methods for the patterning of nanosized Ge2Sb2Te5 (GST) patterns using high-density helicon plasma etching system. It was found that GST patterns of 10-nm-order size could not be formed in a suitable way owing to the damag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::651a679a5296b14c36476aa23f4dc31c
https://doi.org/10.1143/jjap.45.l1080
https://doi.org/10.1143/jjap.45.l1080
Publikováno v:
Thin Solid Films. 484:374-378
The effect of switching characteristics on the ferroelectric fatigue behaviors of the La-substituted Bi 4 Ti 3 O 12 (BLTO) capacitors were investigated. The parameter of switching time ( t s ) for the fabricated BLTO capacitor was found to be depende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa37e02165f9d07a8d4e603787b1649d
https://doi.org/10.1016/j.tsf.2005.03.004
https://doi.org/10.1016/j.tsf.2005.03.004
Autor:
Woong-Chul Shin, G. X. Liu, Il-Soo Kim, Won-Jae Lee, Nam-Yeal Lee, Sang-Ouk Ryu, Geun-Hyoung Lee, Byoung-Chul Shin
Publikováno v:
Integrated Ferroelectrics. 70:123-130
The phase formation and electrical properties of (Bi,La)4Ti3O12 (BLT) thin film prepared by the chemical solution deposition method on Pt/TiO2/SiO2/Si substrates have been investigated. It was observed that the microstructure and electrical propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::688cd7a6a05e5a87980ac2e7aad790d6
https://doi.org/10.1080/10584580490898524
https://doi.org/10.1080/10584580490898524