Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Nam-Kyu Song"'
Autor:
Chi Won Ahn, Hyun-Sang Seo, Seung-Ki Joo, Wook-Jung Hwang, Il-Suk Kang, Jun-Mo Yang, Young-Su Kim, Nam-Kyu Song, Cheol-Ho Park
Publikováno v:
IEEE Transactions on Electron Devices. 58:271-275
The influences of metal-induced laterally crystallized silicon channel corners on the performance and reliability of thin-film transistors (TFTs) were investigated. It was found that the TFT with the channel width, mostly applied to active matrix org
Publikováno v:
Materials Research Bulletin. 43:292-296
The electrical properties of Pb(Zr, Ti)O 3 thin films annealed by Pt thin film heater were investigated. By the thin film heater, we successfully crystallized Pb(Zr, Ti)O 3 thin films at a high temperature above 750 °C in a few seconds. The thin fil
Publikováno v:
IEEE Transactions on Electron Devices. 54:2546-2550
The high dependence of the leakage current on the gate bias that is normally observed in metal-induced laterally crystallized polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) can be reduced effectively by electrical stressing. This brie
Publikováno v:
IEEE Transactions on Electron Devices. 54:1420-1424
It has been known that adjacent Pd enhances the crystallization rate in Ni metal-induced lateral crystallization (Ni-MILC) and this knowledge has been used to fabricate the unidirectional MILC thin-film transistors (TFTs), which eliminate the boundar
Publikováno v:
Integrated Ferroelectrics. 66:97-105
It is well known that electrical properties of PZT thin films can be considerably improved through Selectively Nucleated Lateral Crystallization (SNLC) process. However, we found out that grain boundaries were formed inside the PZT seed and they exte
Publikováno v:
Integrated Ferroelectrics. 64:259-267
We have investigated the selectively nucleated lateral crystallization (SNLC) of lead zirconate titanate (PZT) thin film using a titanium seed. The titanium island seed layer was formed on Pt(200 nm)/SiO2(500 nm)/Si by radio frequency magnetron sputt
Publikováno v:
IEEE Electron Device Letters. 27:899-901
The effect of Pd on the growth rate of metal-induced lateral crystallization (MILC) from Ni seed and the electrical properties of thin-film transistors (TFTs) fabricated on the films crystallized by MILC were investigated. When the Pd metal is placed
Publikováno v:
Journal of the Korean Physical Society. 51:1156
Publikováno v:
Journal of the Korean Physical Society. 51:1076
Publikováno v:
Electrochemical and Solid-State Letters. 10:H142
A major cause of degradations in polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated by Ni metal-induced lateral crystallization (MILC) is known to be due to the presence of Ni silicides in the channel region. In this letter, we