Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Nam-Joo Kim"'
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
This study evaluates the mechanical strength of 3D-printed objects of composite material. The composite material considered in this study comprises onyx as the base material with glass fiber and carbon fiber as the internal reinforcements. 3D printin
Externí odkaz:
https://doaj.org/article/9693f4c15a9249b8b863e76037405899
Autor:
So-jung Kim, Soo-jin Oh, John Ryu, Jung-jun Kim, Haeng-ja Park, Il-hwa Cho, Dae-yeop Han, Na-eun Choi, Hee-jin Woo, Nam-joo Kim, Ji-hoon Kang, Jung-won Kim, Tae-sung In, Eun-joo Cho
Publikováno v:
The Journal of Korean Academy of Physical Therapy Science. 26:24-31
Autor:
Ha-Young Kim, Nam-Joo Kim
Publikováno v:
The Korean Journal of Growth and Development. 27:185-191
Autor:
Seung Bin Park, Yoon Seok Noh, Yoon A. Jeong, Hyo Jung Kim, Byung Il Choi, Jong Jae Park, Moon Kyung Joo, Hyunjoo Lee, Beom Jae Lee, Nam Joo Kim, Jae Seon Kim
Publikováno v:
Digestive diseases and sciences. 65(8)
Colitis-associated cancer (CAC) is one of the most serious complications in patients with inflammatory bowel disease. Sphingosine kinase 1 (Sphk1) is a key enzyme in the sphingolipid pathway and has oncogene potential for inducing both initiation and
Publikováno v:
Pharmaceutical Biology. 36:287-294
In order to search for anti- herpes simplex virus (HSV) type-1 agents from Korean medicinal herbs and Korean traditional prescriptions (herb complexes), we selected 57 medicinal herbs and 13 prescriptions, based on a review of Korean traditional medi
Publikováno v:
Medicine & Science in Sports & Exercise. 48:98
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
a 12V low Vgs (1.8V) RF-N/PLDMOS have been successfully implemented on the 0.18 µm analog CMOS process without thermal budget addition. N- and P-ch LDMOS needs additional body and drift implants, respectively. A short channel length and a small over
Autor:
Jong Ho Lee, Kwang-Dong Yoo, Joo-Hyung Kim, Nam-Joo Kim, Kyu-Ok Lee, Chang-Eun Lee, Dong Seok Kim, Jung-Joo Kim
Publikováno v:
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
Flicker (1/f) noise and TCR are compared for arsenic- and phosphorus-doped polysilicon in a 0.18 μm CMOS base technology. Resistors implanted with arsenic exhibit about 4 times higher noise than with phosphorus at the same dose and thermal budget. T
Autor:
Il-Yong Park, Nam-Joo Kim, Kwang-Dong Yoo, Mi-Young Kim, Yong-Keon Choi, Chul-Jin Yoon, Lou N. Hutter, Hyun-Chol Lim
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
A versatile 30V analog CMOS process in a 0.18 μm technology node has been developed by using cost-effective and modular fashion. To reduce the thermal budget deep NWELL isolation is formed after CMOS well formation. The drain-extended (DE) CMOS from
Autor:
Nam-Joo Kim, Il-Yong Park, Nam-Chil Moon, Yong-Keon Choi, Sang-Chul Shim, Bon-Keun Jun, Kwang-Dong Yoo, Kwang-Young Ko
Publikováno v:
8th International Conference on Power Electronics - ECCE Asia.
This paper reviews the technology trends of BCD (Bipolar-CMOS-DMOS) technology in terms of voltage capability, switching speed of power transistor, and high integration of logic CMOS for SoC (System-on-Chip) solution requiring high-voltage devices. R