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Akademický článek

Etch characteristics of maskless oxide/nitride/oxide/nitride (ONON) stacked structure using C4H2F6-based gas

Autor: Nam Il Cho, Jong Woo Hong, Hee Jin Yoo, Hyeong Joon Eoh, Chan Ho Kim, Jun Won Jeong, Kyung Lim Kim, Jung Hun Kwak, Yong Jun Cho, Dong Woo Kim, Geun Young Yeom

Publikováno v: Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)

Abstract Oxide/Nitride/Oxide/Nitride (ONON; SiO2/SiNx/SiO2/SiNx) stacked structure is widely used in the 3D vertical structure of semiconductor cells. Previously, to form a 3D cells, photoresist (PR) was patterned and repeatedly trimmed on the top of

Externí odkaz: https://doaj.org/article/9a37871ee21b45948cf2106c555386e4

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Akademický článek

Etch characteristics of maskless oxide/nitride/oxide/nitride (ONON) stacked structure using C4H2F6-based gas.

Autor: Cho, Nam Il¹ (AUTHOR), Hong, Jong Woo² (AUTHOR), Yoo, Hee Jin³ (AUTHOR), Eoh, Hyeong Joon⁴ (AUTHOR), Kim, Chan Ho⁴ (AUTHOR), Jeong, Jun Won⁵ (AUTHOR), Kim, Kyung Lim¹ (AUTHOR), Kwak, Jung Hun⁶ (AUTHOR), Cho, Yong Jun⁶ (AUTHOR), Kim, Dong Woo² (AUTHOR) dwkim111@gmail.com, Yeom, Geun Young^2,4 (AUTHOR) gyyeom@skku.edu

Publikováno v: Scientific Reports. 10/2/2024, Vol. 14 Issue 1, p1-10. 10p.

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Impact of charge distribution of soft layers on transient electroosmotic flow of Maxwell fluids in soft nanochannels

Autor: Sin, Jun-Sik, Ri, Nam-Il, Kim, Hyon-Chol, Hyon, Sin-Hyok

We theoretically study transient electroosmotic flow of general Maxwell fluids through polyelectrolyte grafted nanochannel with a layered distribution of charges. By applying the method of Laplace transform, we semi-analytically obtain transient elec

Externí odkaz: http://arxiv.org/abs/2307.13283