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Publikováno v:
Microelectronic Engineering. 193:91-97
In this study, we introduce a thermal sintering process using a heated inert gas as a new sintering method. The heated gas flow is formed by passing nitrogen (N2) gas through a heating head of 300 to 700 °C, and the desired substrates are then expos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3099418b85ce504a9ca8d53d4e8b7d4
https://doi.org/10.1016/j.mee.2018.02.016
https://doi.org/10.1016/j.mee.2018.02.016
