Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nam Myun Cho"'
Autor:
Hyun Jun Bae, Chang Woo Oh, Jin Bum Kim, Nam Myun Cho, Yong Seok Lee, Kong Soo Lee, Donggun Park, Byung-Il Ryu, Na-Young Kim, Yong Lack Choi, Sung In Hong, Dong-Won Kim, Sung Hwan Kim
Publikováno v:
2006 International Electron Devices Meeting.
In this article, we report improved results of 4-bit double SONOS memories (DSMs) with 4-storage nodes through the optimization of ONO layer thicknesses for front and back sides. They show more balanced characteristics between the front and back chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c77b3079efb1caf786193d554c4380
https://doi.org/10.1109/iedm.2006.346947
https://doi.org/10.1109/iedm.2006.346947
Autor:
Kwan Heum Lee, Na-Young Kim, Yong Lack Choi, Chang Woo Oh, Nam Myun Cho, Donggun Park, Byeong Soo Kim, Seung Beom Kim, Dong-Won Kim, Byung-Il Ryu, Sung Hwan Kim
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
We proposed a 4-bit double SONOS memory with two ONO layers, 4 storage nodes, for ultimate multi-bit operation and firstly demonstrate 4-bit operation using the physically separated 4 storage nodes. By using CHEI/HHI program/erase, each node was easi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf42cbc548b19e39e606fcd626aba991
https://doi.org/10.1109/vlsit.2006.1705206
https://doi.org/10.1109/vlsit.2006.1705206
Autor:
Chang Woo Oh, Na Young Kim, Sung Hwan Kim, Yong Lack Choi, Sung In Hong, Hyun Jun Bae, Jin Bum Kim, Kong Soo Lee, Yong Seok Lee, Nam Myun Cho, Dong-Won Kim, Donggun Park, Byung-Il Ryu
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Autor:
Chang Woo Oh, Sung Hwan Kim, Na Young Kim, Yong Lack Choi, Kwan Heum Lee, Byeong Soo Kim, Nam Myun Cho, Seung Beom Kim, Dong-Won Kim, Donggun Park, Byung-Il Ryu
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.; 2006, p40-41, 2p