Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Nakgeuon Seong"'
Publikováno v:
Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e9ff72bf5073d72bdd63ac7b67cfacb
https://doi.org/10.1117/12.2651194
https://doi.org/10.1117/12.2651194
Autor:
Weimin Gao, Nakgeuon Seong, Moyra K. McManus, Shih En Tseng, Anthony Yen, Tsann-Bim Chiou, Pieter Woltgens
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
We explore various resolution enhancement techniques and investigate their patterning benefits for via patterns of the 3-nm logic node using computational lithography. Simulations are performed by the method of source mask optimization (SMO) using th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522753e4e6ab39f8292175adcf48ed3a
https://doi.org/10.1117/12.2552888
https://doi.org/10.1117/12.2552888
Autor:
Nakgeuon Seong, Joshua Thornes, Paolo Alagna, Gregory Rechsteiner, Koen D'havé, Ivan Lalovic, Lieve Van Look, Joost Bekaert, Omar Zurita
Publikováno v:
SPIE Proceedings.
Reducing lithography pattern variability has become a critical en abler of ArF immersion scali ng and is required to ensure consistent lithography process yield for sub-30nm device tech nologies. As DUV multi-patterning requirements continue to shrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7cbe9ddee5eaffbc931a920dfcef435
https://doi.org/10.1117/12.2013213
https://doi.org/10.1117/12.2013213
Autor:
Omar Zurita, Yookeun Won, Joshua Thornes, Jinphil Choi, Bernd Burfeindt, Nakgeuon Seong, Young-Seog Kang, Slava Rokitski, Chan-Hoon Park
Publikováno v:
SPIE Proceedings.
In order to improve process control of the lithography process, enhanced On-board metrology, measuring of the light source beam parameters with software solutions for monitoring, reporting and analyzing the light source's performance has been introdu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a936b8819abab8cfe05e53e66d4b45
https://doi.org/10.1117/12.917900
https://doi.org/10.1117/12.917900
Autor:
Jason J. Lee, Ivan Lalovic, Nigel R. Farrar, Nakgeuon Seong, Hans Van Der Laan, Tom van der Hoeff, Michiel Kupers, Carsten Kohler
Publikováno v:
SPIE Proceedings.
In this paper we discuss a laser focus drilling technique which has recently been developed for advanced immersion lithography scanners to increase the depth of focus and therefore reduce process variability of contact-hole patterns. Focus drilling i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b963456ae50d825e0446b4a5757a912
https://doi.org/10.1117/12.882391
https://doi.org/10.1117/12.882391
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
Maintaining the stability of all litho process parameters over time is crucial to ensuring consistent litho process yield throughout the product lifetime. The sensitivity of litho process performance to variations in litho process parameters is getti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b6947165e90905f35dfb4facfffa49
https://doi.org/10.1117/12.815414
https://doi.org/10.1117/12.815414
Publikováno v:
SPIE Proceedings.
Tighter CD control requirements of the smaller devices in modern semiconductor products demand control of all potential sources of change in imaging characteristics. Bandwidth of ArF lasers is known to be one of the important parameters to be control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::587a42a4bb27ed50401ff1039c9b890a
https://doi.org/10.1117/12.804557
https://doi.org/10.1117/12.804557
Autor:
David O. S. Melville, Kafai Lai, Kehan Tian, Nakgeuon Seong, Matthew E. Colburn, Alan E. Rosenbluth, Dirk Pfeiffer
Publikováno v:
SPIE Proceedings.
We provide an expanded description of the global algorithm for mask optimization introduced in our earlier papers, and discuss auxiliary optimizations that can be carried out in the problem constraints and film stack. Mask optimization tends inherent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13ce11ab3917182fc0ca4ee9670de5be
https://doi.org/10.1117/12.713050
https://doi.org/10.1117/12.713050
Autor:
Nakgeuon Seong, Alan E. Rosenbluth
Publikováno v:
SPIE Proceedings.
This paper extends our previous work on globally optimizing source shapes for lithography. A key extension is our global optimization against metrics that involve process window through focus. For example, the user can determine the particular source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d5211b1e69c165e289101ef7180b8a
https://doi.org/10.1117/12.656950
https://doi.org/10.1117/12.656950
Publikováno v:
SPIE Proceedings.
Many subtle effects arise when tracing polarization along rays that converge or diverge to form an image. This paper concentrates on a few examples that are notable for the challenges they pose in properly analyzing vector imaging problems. A strikin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9f74fb6b47d45541a59fd956afc04c
https://doi.org/10.1117/12.618128
https://doi.org/10.1117/12.618128