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Autor:
Nakamura, Nathan C. Palmquist, Ryan Anderson, Jared A. Kearns, Joonho Back, Emily Trageser, Stephen Gee, Steven P. Denbaars, Shuji
Publikováno v:
Photonics; Volume 10; Issue 6; Pages: 646
We report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, a buried tunnel junction current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed opera