Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Nak-Jin Son"'
Autor:
Nak-Jin Son, Yongmin Park, Hwa-Sung Rhee, Sung Gun Kang, Sung-il Cho, Kyung-Hwan Yeo, Eun-Cheol Lee, Yun-Ki Choi, Jong Shik Yoon, Heebum Hong, Jeong-Hoon Ahn, Dongwoo Kim, Il-Ryong Kim, Jungtae Kim, Jong Mil Youn, Jae-Hun Jeong
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
8LPP logic platform technology supports mobile and high-performance and lower power application especially for mobile, artificial intelligence (AI), and cryptocurrency devices. 8LPP is employing the evolutionary generation of bulk FinFET FEOL and 44n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40b1037773b5c94d6df5444162cc2a3a
https://doi.org/10.1109/vlsit.2018.8510673
https://doi.org/10.1109/vlsit.2018.8510673
A Unique Dual-Poly Gate Technology for 1.2-V Mobile DRAM with Simple In situ n$^+$ -Doped Polysilicon
Autor:
Donggun Park, Wouns Yang, Gyo-Young Jin, Nak-Jin Son, Wookje Kim, Yong-chul Oh, Sungho Jang, Kinam Kim
Publikováno v:
IEEE Transactions on Electron Devices. 51:1644-1652
Highly manufacturable sub-100-nm 1.2-V mobile dynamic random access memory (DRAM) having full functionality and excellent reliability have been successfully developed. A unique and simple DRAM technology with dual-gate CMOSFET was realized using plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97374d2b41958be0e1c1d756324aae02
https://doi.org/10.1109/ted.2004.835162
https://doi.org/10.1109/ted.2004.835162
Autor:
Nak-Jin Son, Byung-Il Ryu, Donggun Park, Chang-Hoon Jeon, Satoru Yamada, Shin-Deuk Kim, Young-pil Kim, Jung-Su Park, Sang-Yeon Han, Wouns Yang, Wookje Kim, Wonseok Lee, Siok Soh
Publikováno v:
2006 European Solid-State Device Research Conference.
Gate induced drain leakage (GIDL) characteristics were investigated with the recessed channel array transistor (RCAT) for DRAM, using the elevated source drain (ESD). The lower doping concentration of a source-drain region in the ESD structure reduce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb966d52f7b86502c70b97df305be934
https://doi.org/10.1109/essder.2006.307686
https://doi.org/10.1109/essder.2006.307686
Autor:
Donggun Park, Nak-Jin Son, Seung-Moo Lee, Sun-Cheol Hong, Won-Hee Jang, Chihoon Lee, Wonshik Lee, Tae-Hyun An
Publikováno v:
2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).
When forming microscopic patterns in sub-0.17/sup /spl middot// /spl middot/process, in order to secure stable DOF margin at photo lithography, inorganic SiO/sub x/N/sub y/ is often used for antireflective coating (ARC) for patterning line and contac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7d78be980afbc9f53d5c946e8ce2f4d
https://doi.org/10.1109/isdrs.2001.984433
https://doi.org/10.1109/isdrs.2001.984433
Effects of RTA and WSi/sub x/-polycide gate processes on MOSFET reliability for giga-bit scale DRAMs
Publikováno v:
2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).
We report the process effects on the MOSFET reliability and characteristics for the gate stack formation process in DRAM (Dynamic Random Access Memory). A rapid thermal annealing (RTA) process, employed for the reduction of word-line resistance and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d619d5956318903dd4fbdd56fbe02545
https://doi.org/10.1109/irws.2000.911918
https://doi.org/10.1109/irws.2000.911918
Autor:
Wookje Kim, Satoru Yamada, Sang-Yeon Han, Chang-Hoon Jeon, Shin-Deuk Kim, Siok Soh, Nak-Jin Son, Jung-Su Park, Wouns Yang, Young-Pil Kim, Won-Seok Lee, Donggun Park, Byung-il Ryu
Publikováno v:
2006 European Solid-State Device Research Conference; 2006, p254-257, 4p
Autor:
Chi-Hoon Lee, Nak-Jin Son, Sun-Cheol Hong, Seung-Moo Lee, Dong-Gun Park, Won-Hee Jang, Tae-Hyun An, Wonshik Lee
Publikováno v:
2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497); 2001, p38-41, 4p
Publikováno v:
2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515); 2000, p125-128, 4p
Publikováno v:
Japanese Journal of Applied Physics. 37:4818
Quantum well intermixing based on impurity-free vacancy disordering in Al0.07Ga0.93As /Al x Ga1-x As graded-index (x=0.23–0.5) heterostructures has been performed on a single wafer with various mesa structures by a one-step annealing. From photolum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e65d78ef03e4e4795bca04faf5d95aba
https://doi.org/10.1143/jjap.37.4818
https://doi.org/10.1143/jjap.37.4818
Autor:
Nak Jin Son, J. C. Ahn, K.S. Kwak, Byung Hoon Park, O'Dae Kwon, Young Hee Lee, Hwa Young Kang
Publikováno v:
Japanese Journal of Applied Physics. 36:2134
High-order polarization and transverse modes of one-step metal-organic vapor-phase epitaxy (MOVPE)-grown vertical-cavity surface-emitting laser (VCSEL) diodes are investigated. We find radially symmetric multipole transverse modes with a fixed polari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::590e8e893e27ab855387703856336c5f
https://doi.org/10.1143/jjap.36.2134
https://doi.org/10.1143/jjap.36.2134