Zobrazeno 1 - 10
of 150
pro vyhledávání: '"Nak-Jin Seong"'
Autor:
Bae, Soo-Hyun, Moon, Seo-Hyun, Kwon, Young Ha, Nak-Jin-Seong, Choi, Kyu-Jeong, Yoon, Sung-Min
Publikováno v:
In Journal of Alloys and Compounds 15 June 2022 906
Autor:
Hyun-Min Ahn, Seo-Hyun Moon, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Jong-Heon Yang, Yong-Hae Kim, Sung-Min Yoon
Publikováno v:
IEEE Electron Device Letters. 43:1909-1912
Autor:
Shin-Ho Noh, Hyo-Eun Kim, Jong-Heon Yang, Yong-Hae Kim, Young-Ha Kwon, Nak-Jin Seong, Chi-Sun Hwang, Kyu-Jeong Choi, Sung-Min Yoon
Publikováno v:
IEEE Transactions on Electron Devices. 69:5542-5548
Autor:
Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, Young Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Sung-Min Yoon
Publikováno v:
ACS Applied Materials & Interfaces. 14:31010-31023
Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic e
Publikováno v:
Electronic Materials Letters. 18:294-303
Autor:
Young Ha Kwon, Kyu-Jeong Choi, Yong-Hae Kim, Chi-Sun Hwang, Seo-Hyun Moon, Soo-Hyun Bae, Nak-Jin Seong, Sung-Min Yoon, Jong-Heon Yang
Publikováno v:
ACS Applied Electronic Materials. 3:4849-4858
Autor:
Hyun-Min Ahn, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Jong-Heon Yang, Yong-Hae Kim, Gyungtae Kim, Sung-Min Yoon
Publikováno v:
Nanotechnology. 34:155301
Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However,
Publikováno v:
IEEE Electron Device Letters. :1-1
Publikováno v:
Journal of Vacuum Science & Technology B. 40:040602
Thin film transistors (TFTs) using In-Ga-Sn-O (IGTO) active channel layers, which were prepared by atomic-layer deposition (ALD) techniques, were fabricated and characterized with exploring the optimum IGTO channel compositions and the process condit
Publikováno v:
Journal of Materials Chemistry C. 7:6059-6069
Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic layer deposition (ALD) were strategically investigated for thin film transistor applications. The atomic compositions (In : Ga : Zn) of ALD-IGZO films were varie