Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Najla S. Al-Shameri"'
Autor:
Hassen Dakhlaoui, Walid Belhadj, Haykel Elabidi, Najla S. Al-Shameri, Fatih Ungan, Bryan M. Wong
Publikováno v:
Materials, Vol 17, Iss 3, p 559 (2024)
We investigate the transmittance spectrum of a multichannel filter composed of dielectric (A) and plasma (P) materials in the microwave region within the transfer matrix formalism. Two configurations of the proposed filter are studied under the influ
Externí odkaz:
https://doaj.org/article/d11470c5a1e549c698ddcce1802c0083
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 152:115760
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e027ff56a2fe8a2001ee4e5cef8f1d2
https://doi.org/10.1016/j.physe.2023.115760
https://doi.org/10.1016/j.physe.2023.115760
Autor:
Najla S. Al-Shameri, Hassen Dakhlaoui
Publikováno v:
Coatings; Volume 12; Issue 4; Pages: 504
This paper has studied the electronic properties of multi-diluted magnetic semiconductor (DMS) layers Ga(1 − x)MnxAs interposed between nonmagnetic GaAs layers. The asymmetry of confining potential on the transmission coefficient by tuning the temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7f6fe0a805184cb927434f8eca77fe9
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 33:2143-2148
In this paper, we investigated theoretically the spin-dependent transport of holes in heterostructures containing diluted magnetic semiconductor GaMnAs. Especially, we have addressed the transmission of holes through heterostructures based on single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::806ab4429d94321815acbbef65cbf505
https://doi.org/10.1007/s10948-020-05463-9
https://doi.org/10.1007/s10948-020-05463-9
Autor:
Najla S. Al-Shameri, Hassen Dakhlaoui
Publikováno v:
Physica B: Condensed Matter. 628:413555
In this paper, we have discussed theoretically the effect of an applied bias voltage and the temperature on the spin-tunneling time, spin-dependent polarization and current densities of holes in GaAs/GaMnAs double barriers using the transfer matrix m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a366817a9cb9296313a05cd45820df74
https://doi.org/10.1016/j.physb.2021.413555
https://doi.org/10.1016/j.physb.2021.413555
Autor:
Mouna Nefzi, Shaffa Almansour, Hassen Dakhlaoui, Ibtessam Alnaim, Najla S. Al-Shameri, Alanoud Al Suwaidan, Hadeel. Elmobkey
Publikováno v:
Physica B: Condensed Matter. 597:412403
This paper investigates how an applied magnetic field, the quantum size, and spin polarization effect an asymmetric heterostructure composed of InAs, GaAs, and GaSb semiconductors. Using a theoretical approach based on the transfer matrix method and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef40586d1f62a5d57940102efc69305
https://doi.org/10.1016/j.physb.2020.412403
https://doi.org/10.1016/j.physb.2020.412403
Autor:
Mouna Nefzi, Najla S. Al-Shameri, Alanoud Al Suwaidan, Ibtessam Alnaim, Shaffa Almansour, Hassen Dakhlaoui, Hadeel. Elmobkey
Publikováno v:
Chemical Physics Letters. 757:137866
Electronic transmission and spin polarization have been computed as a function of the incident electron energy for heterostructures like InAs/GaSb/InGaAs triple barriers. This was achieved using the transfer matrix method while taking into account th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef7b69845c43e9b9f2696d52efdc693b
https://doi.org/10.1016/j.cplett.2020.137866
https://doi.org/10.1016/j.cplett.2020.137866
Publikováno v:
Optics and Photonics Journal. :326-331
The role of the carrier’s recombination velocity Si within the depletion Layer of p-n junction solar cell and the external bias voltage Va across the junction in determining the current density “J” through the cell is revealed. The unsteady car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3618feb8fb3976db29b2227525fa5772
https://doi.org/10.4236/opj.2012.24040
https://doi.org/10.4236/opj.2012.24040