Zobrazeno 1 - 10
of 482
pro vyhledávání: '"Nair, K. G."'
We discuss four important aspects of 1.5 MeV Au2+ ion-induced flux dependent sputtering from gold nanostrcutures (of an average size 7.6 nm and height 6.9 nm) that are deposited on silicon substrates: (a) Au sputtering yield at the ion flux of 6.3x10
Externí odkaz:
http://arxiv.org/abs/0806.3162
Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions cm-2 s-1 and
Externí odkaz:
http://arxiv.org/abs/0805.3965
Autor:
Ghatak, J., Bhatta, M. Umananda, Sundaravel, B., Nair, K. G. M., Liou, Sz-Chian, Chen, Cheng-Hsuan, Wang, Yuh-Lin, Satyam, P. V.
We report a direct observation of dramatic mass transport due to 1.5 MeV Au2+ ion impact on isolated Au nanostructures of an average size 7.6 nm and a height 6.9 nm that are deposited on Si (111) substrate under high flux (3.2x10^10 to 6.3x10^12 ions
Externí odkaz:
http://arxiv.org/abs/0803.3495
Autor:
Dhara, S., Magudapathy, P., Kesavamoorthy, R., Kalavathi, S., Sastry, V. S., Nair, K. G. M., Hsu, G. M., Chen, L. C., Chen, K. H., Santhakumar, K., Soga, T.
Publikováno v:
Applied Physics Letters 88 (24) 241904 (2006)
InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the c
Externí odkaz:
http://arxiv.org/abs/0708.2221
Autor:
Dhara, S., Magudapathy, P., Kesavamoorthy, R., Kalavathi, S., Nair, K. G. M., Hsu, G. M., Chen, L. C., Chen, K. H., Santhakumar, K., Soga, T.
Publikováno v:
Applied Physics Letters 87 (26) 281915 (2005)
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed
Externí odkaz:
http://arxiv.org/abs/0708.2211
Autor:
Dhara, S., Chandra, Sharat, Mangamma, G., Kalavathi, S., Shankar, P., Nair, K. G. M., Tyagi, A. K., Hsu, C. W., Kuo, C. C., Chen, L. C., Chen, K. H., Sriram, K. K.
Publikováno v:
Applied Physics Letters 90 (21) 213104 (2007)
UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes
Externí odkaz:
http://arxiv.org/abs/0708.2229
Autor:
Dhara, S., Sundaravel, B., Nair, K. G. M., Kesavamoorthy, R., Valsakumar, M. C., Rao, T. V. Chandrasekhar, Chen, L. C., Chen, K. H.
Publikováno v:
Applied Physics Letters 88 (17) 173110 (2006)
Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study con
Externí odkaz:
http://arxiv.org/abs/0708.2217
Autor:
Prakash, Ram, Amirthapandian, S., Phase, D. M., Deshpande, S. K., Kesavamoorthy, R., Nair, K. G. M.
Publikováno v:
Nuclear Instruments and Methods B 244 (2006) 283-288
The effects of ion beam induced atomic mixing and subsequent thermal treatment in Si/C multilayer structures are investigated by use of the technique of grazing incidence X-ray diffraction (GIXRD) and Raman spectroscopy. The [Si (3.0 nm) / C (2.5 nm)
Externí odkaz:
http://arxiv.org/abs/cond-mat/0601224
Autor:
Gangopadhyay, P., Kesavamoorthy, R., Bera, Santanu, Magudapathy, P., Nair, K. G. M., Panigrahi, B. K., Narasimhan, S. V.
Publikováno v:
Physical Review Letters 94(4), 047403 (2005)
Results obtained from the optical absorption and photoluminescence (PL) spectroscopy experiments have shown the formation of excitons in the silver-exchanged glass samples. These findings are reported here for the first time. Further, we investigate
Externí odkaz:
http://arxiv.org/abs/cond-mat/0502315
Autor:
Dhara, S., Chandra, Sharat, Magudapathy, P., Kalavathi, S., Panigrahi, B. K., Nair, K. G. M., Sastry, V. S., Hsu, C. W., Wu, C. T., Chen, K. H., Chen, L. C.
Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and subsequent anneali
Externí odkaz:
http://arxiv.org/abs/cond-mat/0409732