Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Nair, J. R."'
Autor:
Piatti, E., Galasso, S., Tortello, M., Nair, J. R., Gerbaldi, C., Daghero, D., Bruna, M., Borini, S., Gonnelli, R. S.
Publikováno v:
E. Piatti et al., Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene, Appl. Surf. Sci. 395, 37 (2017)
We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer sa
Externí odkaz:
http://arxiv.org/abs/1701.02701
Autor:
Piatti, E., Daghero, D., Ummarino, G. A., Laviano, F., Nair, J. R., Cristiano, R., Casaburi, A., Portesi, C., Sola, A., Gonnelli, R. S.
Publikováno v:
Phys. Rev. B 95, 140501 (2017)
The electrochemical gating technique is a powerful tool to tune the \textit{surface} electronic conduction properties of various materials by means of pure charge doping, but its efficiency is thought to be hampered in materials with a good electroni
Externí odkaz:
http://arxiv.org/abs/1611.03132
Autor:
Gonnelli, R. S., Piatti, E., Sola, A., Tortello, M., Dolcini, F., Galasso, S., Nair, J. R., Gerbaldi, C., Cappelluti, E., Bruna, M., Ferrari, A. C.
Publikováno v:
2D Mater. 4, 035006 (2017)
We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resista
Externí odkaz:
http://arxiv.org/abs/1610.09102
Autor:
Tortello, M., Sola, A., Sharda, Kanudha, Paolucci, F., Nair, J. R., Gerbaldi, C., Daghero, D., Gonnelli, R. S.
Publikováno v:
Applied Surface Science 269, 17-22 (2013)
The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge, determined by
Externí odkaz:
http://arxiv.org/abs/1301.3769