Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Nailong He"'
Autor:
Wentong Zhang, Ning Tang, Yuting Liu, Yang Yu, Nailong He, Sen Zhang, Ming Qiao, Zhaoji Li, Bo Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 70:1843-1848
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a88daab1e04e9e324a0c316837294b87
https://doi.org/10.1109/ted.2023.3249140
https://doi.org/10.1109/ted.2023.3249140
Publikováno v:
Journal of the Society for Information Display. 31:184-194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56c9329b5b063ff48efff278d60a60f4
https://doi.org/10.1002/jsid.1195
https://doi.org/10.1002/jsid.1195
Autor:
Siyuan Yu, Qi Zhou, Gang Shi, Tianyang Wu, Jing Zhu, Long Zhang, Weifeng Sun, Sen Zhang, Nailong He, Ye Li
Publikováno v:
IEEE Transactions on Industrial Electronics. 70:741-751
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de65e59a0ec5dfb9f9e4faa2902e0a52
https://doi.org/10.1109/tie.2022.3153808
https://doi.org/10.1109/tie.2022.3153808
Autor:
Jie Ma, Yong Gu, Long Zhang, Min Luo, Chengwu Pan, Siyang Liu, Weifeng Sun, Jing Zhu, Nailong He, Sen Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 69:5944-5947
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e37c4ffb3e00272536c8509a8e5a07c2
https://doi.org/10.1109/ted.2022.3195481
https://doi.org/10.1109/ted.2022.3195481
Autor:
Long Zhang, Jie Ma, Min Luo, Wangming Cui, Peigang Liu, Siyang Liu, Jiaxing Wei, Sheng Li, Weifeng Sun, Nailong He, Sen Zhang, Song Bai
Publikováno v:
IEEE Transactions on Electron Devices. 69:4042-4045
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b96c7b1ba2c08a8368d7fc72faf2d912
https://doi.org/10.1109/ted.2022.3176840
https://doi.org/10.1109/ted.2022.3176840
Autor:
Wentong Zhang, Le Zhu, Fengrun Tian, Jie Luo, Nailong He, Zhili Zhang, Sen Zhang, Jinping Zhang, Ming Qiao, Zhaoji Li, Bo Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 69:2528-2533
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f74d12237b1ffa646a24ff8b9810f87
https://doi.org/10.1109/ted.2022.3156098
https://doi.org/10.1109/ted.2022.3156098
Autor:
Sen Zhang, Yan Gu, Yunqi Wang, Siyuan Yu, Yangyang Lu, Jing Zhu, Nailong He, Weifeng Sun, Yunwu Zhang, Guichuang Zhu
Publikováno v:
IEEE Transactions on Industrial Electronics. 68:11420-11427
In this article, a new freewheeling circuit with a junction field-effect transistor (JFET) structure is developed to replace the traditional high voltage diode for freewheeling in the high voltage monolithic IC for the first time. The JFET structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0e03662d7cc80e5563e6fb9a2a9ee7a
https://doi.org/10.1109/tie.2020.3038087
https://doi.org/10.1109/tie.2020.3038087
Autor:
Yan Gu, Sen Zhang, Xinyu Liu, Yongjiu Cui, Long Zhang, Weifeng Sun, Jing Zhu, Wangming Cui, Mingfei Huang, Jie Ma, Nailong He
Publikováno v:
IEEE Transactions on Electron Devices. 68:5073-5077
A silicon-on-insulator (SOI) lateral diffused metal-oxide semiconductor (LDMOS) with potential modulation plates (PMPs) and deep-oxide trenches (DOTs) is proposed and studied through TCAD simulations, which aims to enhance the electron mobility and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dead6983d8881469deded5c3857e035c
https://doi.org/10.1109/ted.2021.3105943
https://doi.org/10.1109/ted.2021.3105943
Autor:
Long Zhang, Sen Zhang, Feiming Huang, Nailong He, Yan Gu, Wangming Cui, Jie Ma, Jing Zhu, Weifeng Sun
Publikováno v:
IEEE Transactions on Electron Devices. 68:3930-3935
The gate voltage overshoot during the turn-on transient in the trench gate U-shaped (TGU) channel silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is investigated and novel structures are proposed for the first time with num
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e9ba8d9464b4ab2718465d3568c8c68
https://doi.org/10.1109/ted.2021.3084578
https://doi.org/10.1109/ted.2021.3084578
Autor:
Shuai Yuan, Weifeng Sun, Jie Ma, Nailong He, Jing Zhu, Yongjiu Cui, Long Zhang, Wangming Cui, Sen Zhang
Publikováno v:
IEEE Electron Device Letters. 42:1037-1040
A 1200V 4H-SiC lateral double-diffused MOSFET (LDMOS) featuring a lightly doped P-top layer at the source side, and a high-doped N-well layer arranged between the channel and P-top layer is proposed. In order to promote the simulation accuracy, Senta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52addce4ca070ffe2f4a048d0fe13ca6
https://doi.org/10.1109/led.2021.3083588
https://doi.org/10.1109/led.2021.3083588